Thus, carbon interstitials and vacancies located close together are assumed to end up in such a configuration in which the carbon atom is tetrahedrally coordinated and bound to four silicon atoms as expected in silicon carbide.
In contrast to the above, this would suggest a silicon carbide precipitation by succesive creation of substitutional carbon instead of the agglomeration of C-Si dumbbell interstitials followed by an abrupt precipitation.
+{\color{red}Todo:
+C atoms in 100 DB tightend in 110 direction, which is important for stress compensation in some combined constellations.
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+Most of the combinations should only be thought of intermediate configurations, which need to be transformed in the later SiC precipitation process.
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+{\color{red}Todo:
+Better structure, better language, better methodology!
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+Fit of lennard-jones an other rep + attr potentials in 110 interaction data!
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+