X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=372a642f5ac031151cc9bf528e44d78e8767e2e1;hb=1d5283e2031c9611f494a9a98d115f32cd9898de;hp=42a095fe85cb413cc8598e2af492cd1e12008477;hpb=21290546f2fd1d713f3238662fd1c3e395340626;p=lectures%2Flatex.git

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 42a095f..372a642 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -92,6 +92,22 @@
                  carbon, both mechanisms explained + refs",
 }
 
+@Article{skorupa96,
+  title =        "Carbon-mediated effects in silicon and in
+                 silicon-related materials",
+  journal =      "Materials Chemistry and Physics",
+  volume =       "44",
+  number =       "2",
+  pages =        "101--143",
+  year =         "1996",
+  note =         "",
+  ISSN =         "0254-0584",
+  doi =          "DOI: 10.1016/0254-0584(95)01673-I",
+  URL =          "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
+  author =       "W. Skorupa and R. A. Yankov",
+  notes =        "review of silicon carbon compound",
+}
+
 @Book{laplace,
   author =       "P. S. de Laplace",
   title =        "Th\'eorie analytique des probabilit\'es",
@@ -1588,6 +1604,21 @@
   author =       "Yu. M. Tairov and V. F. Tsvetkov",
 }
 
+@Article{tairov81,
+  title =        "General principles of growing large-size single
+                 crystals of various silicon carbide polytypes",
+  journal =      "Journal of Crystal Growth",
+  volume =       "52",
+  number =       "Part 1",
+  pages =        "146--150",
+  year =         "1981",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(81)90184-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
+  author =       "Yu.M. Tairov and V. F. Tsvetkov",
+}
+
 @Article{nishino83,
   author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
                  Will",
@@ -3109,3 +3140,109 @@
   year =         "1907",
   author =       "H. J. Round",
 }
+
+@Article{vashishath08,
+  title =        "Recent trends in silicon carbide device research",
+  journal =      "Mj. Int. J. Sci. Tech.",
+  volume =       "2",
+  number =       "03",
+  pages =        "444--470",
+  year =         "2008",
+  author =       "Munish Vashishath and Ashoke K. Chatterjee",
+  URL =          "http://www.doaj.org/doaj?func=abstract&id=286746",
+  notes =        "sic polytype electronic properties",
+}
+
+@Article{nelson69,
+  author =       "W. E. Nelson and F. A. Halden and A. Rosengreen",
+  collaboration = "",
+  title =        "Growth and Properties of beta-Si{C} Single Crystals",
+  publisher =    "AIP",
+  year =         "1966",
+  journal =      "Journal of Applied Physics",
+  volume =       "37",
+  number =       "1",
+  pages =        "333--336",
+  URL =          "http://link.aip.org/link/?JAP/37/333/1",
+  doi =          "10.1063/1.1707837",
+  notes =        "sic melt growth",
+}
+
+@Article{arkel25,
+  author =       "A. E. van Arkel and J. H. de Boer",
+  title =        "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
+                 und Thoriummetall",
+  publisher =    "WILEY-VCH Verlag GmbH",
+  year =         "1925",
+  journal =      "Z. Anorg. Chem.",
+  volume =       "148",
+  pages =        "345--350",
+  URL =          "http://dx.doi.org/10.1002/zaac.19251480133",
+  doi =          "10.1002/zaac.19251480133",
+  notes =        "van arkel apparatus",
+}
+
+@Article{moers31,
+  author =       "K. Moers",
+  year =         "1931",
+  journal =      "Z. Anorg. Chem.",
+  volume =       "198",
+  pages =        "293",
+  notes =        "sic by van arkel apparatus, pyrolitical vapor growth
+                 process",
+}
+
+@Article{kendall53,
+  author =       "J. T. Kendall",
+  title =        "Electronic Conduction in Silicon Carbide",
+  publisher =    "AIP",
+  year =         "1953",
+  journal =      "The Journal of Chemical Physics",
+  volume =       "21",
+  number =       "5",
+  pages =        "821--827",
+  URL =          "http://link.aip.org/link/?JCP/21/821/1",
+  notes =        "sic by van arkel apparatus, pyrolitical vapor growth
+                 process",
+}
+
+@Article{lely55,
+  author =       "J. A. Lely",
+  year =         "1955",
+  journal =      "Ber. Deut. Keram. Ges.",
+  volume =       "32",
+  pages =        "229",
+  notes =        "lely sublimation growth process",
+}
+
+@Article{knippenberg63,
+  author =       "W. F. Knippenberg",
+  year =         "1963",
+  journal =      "Philips Res. Repts.",
+  volume =       "18",
+  pages =        "161",
+  notes =        "acheson process",
+}
+
+@Article{hoffmann82,
+  author =       "L. Hoffmann and G. Ziegler and D. Theis and C.
+                 Weyrich",
+  collaboration = "",
+  title =        "Silicon carbide blue light emitting diodes with
+                 improved external quantum efficiency",
+  publisher =    "AIP",
+  year =         "1982",
+  journal =      "Journal of Applied Physics",
+  volume =       "53",
+  number =       "10",
+  pages =        "6962--6967",
+  keywords =     "light emitting diodes; silicon carbides; quantum
+                 efficiency; visible radiation; experimental data;
+                 epitaxy; fabrication; medium temperature; layers;
+                 aluminium; nitrogen; substrates; pn junctions;
+                 electroluminescence; spectra; current density;
+                 optimization",
+  URL =          "http://link.aip.org/link/?JAP/53/6962/1",
+  doi =          "10.1063/1.330041",
+}
+