X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=372a642f5ac031151cc9bf528e44d78e8767e2e1;hb=1d5283e2031c9611f494a9a98d115f32cd9898de;hp=b0e716ca40232b5230d6db8f03444d56bed39dfa;hpb=c640f5d84d0e49f35d6e97b8c5e9ea2d949f9bfa;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index b0e716c..372a642 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -92,6 +92,22 @@ carbon, both mechanisms explained + refs", } +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Materials Chemistry and Physics", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -1279,7 +1295,7 @@ notes = "gan on 3c-sic", } -@Article{liu02, +@Article{liu_l02, title = "Substrates for gallium nitride epitaxy", journal = "Materials Science and Engineering: R: Reports", volume = "37", @@ -1588,6 +1604,21 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -3022,10 +3053,6 @@ doi = "DOI: 10.1016/S0168-583X(00)00542-5", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", author = "W. J. Weber and W. Jiang and S. Thevuthasan", - keywords = "Amorphization", - keywords = "Irradiation effects", - keywords = "Thermal recovery", - keywords = "Silicon carbide", } @Article{bockstedte03, @@ -3113,3 +3140,109 @@ year = "1907", author = "H. J. Round", } + +@Article{vashishath08, + title = "Recent trends in silicon carbide device research", + journal = "Mj. Int. J. Sci. Tech.", + volume = "2", + number = "03", + pages = "444--470", + year = "2008", + author = "Munish Vashishath and Ashoke K. Chatterjee", + URL = "http://www.doaj.org/doaj?func=abstract&id=286746", + notes = "sic polytype electronic properties", +} + +@Article{nelson69, + author = "W. E. Nelson and F. A. Halden and A. Rosengreen", + collaboration = "", + title = "Growth and Properties of beta-Si{C} Single Crystals", + publisher = "AIP", + year = "1966", + journal = "Journal of Applied Physics", + volume = "37", + number = "1", + pages = "333--336", + URL = "http://link.aip.org/link/?JAP/37/333/1", + doi = "10.1063/1.1707837", + notes = "sic melt growth", +} + +@Article{arkel25, + author = "A. E. van Arkel and J. H. de Boer", + title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium- + und Thoriummetall", + publisher = "WILEY-VCH Verlag GmbH", + year = "1925", + journal = "Z. Anorg. Chem.", + volume = "148", + pages = "345--350", + URL = "http://dx.doi.org/10.1002/zaac.19251480133", + doi = "10.1002/zaac.19251480133", + notes = "van arkel apparatus", +} + +@Article{moers31, + author = "K. Moers", + year = "1931", + journal = "Z. Anorg. Chem.", + volume = "198", + pages = "293", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{kendall53, + author = "J. T. Kendall", + title = "Electronic Conduction in Silicon Carbide", + publisher = "AIP", + year = "1953", + journal = "The Journal of Chemical Physics", + volume = "21", + number = "5", + pages = "821--827", + URL = "http://link.aip.org/link/?JCP/21/821/1", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{lely55, + author = "J. A. Lely", + year = "1955", + journal = "Ber. Deut. Keram. Ges.", + volume = "32", + pages = "229", + notes = "lely sublimation growth process", +} + +@Article{knippenberg63, + author = "W. F. Knippenberg", + year = "1963", + journal = "Philips Res. Repts.", + volume = "18", + pages = "161", + notes = "acheson process", +} + +@Article{hoffmann82, + author = "L. Hoffmann and G. Ziegler and D. Theis and C. + Weyrich", + collaboration = "", + title = "Silicon carbide blue light emitting diodes with + improved external quantum efficiency", + publisher = "AIP", + year = "1982", + journal = "Journal of Applied Physics", + volume = "53", + number = "10", + pages = "6962--6967", + keywords = "light emitting diodes; silicon carbides; quantum + efficiency; visible radiation; experimental data; + epitaxy; fabrication; medium temperature; layers; + aluminium; nitrogen; substrates; pn junctions; + electroluminescence; spectra; current density; + optimization", + URL = "http://link.aip.org/link/?JAP/53/6962/1", + doi = "10.1063/1.330041", +} +