X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=83dedd2957b08d776b9f9e36ec9125d18b020438;hb=9965e19a285d1af2b8b0a47d62f95904c6507a3f;hp=26f06082a503074480bdc90afdb5854adb0c3440;hpb=a141d46595869e132fe461227a1bc820efae3ad8;p=lectures%2Flatex.git diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 26f0608..83dedd2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -3476,3 +3476,72 @@ doi = "10.1063/1.360980", notes = "apb model", } + +@Article{henke95, + author = "S. Henke and B. Stritzker and B. Rauschenbach", + collaboration = "", + title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60] + carbonization of silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "3", + pages = "2070--2073", + keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION; + FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL + STRUCTURE", + URL = "http://link.aip.org/link/?JAP/78/2070/1", + doi = "10.1063/1.360184", + notes = "ssmbe of sic on si, lower temperatures", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "Journal of Crystal Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +}