X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=eb3dbebcbac1ab0dad60827fbe8b09eef3f1abbe;hb=8b564b775ab6cf010f2f28844ac73316c2545240;hp=3514066d8925dff2f3eaae09c762e91fac7ec4f1;hpb=2b030e78f7f74881964d0883c4c2c25bf62b33f7;p=lectures%2Flatex.git

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@@ -155,6 +155,9 @@ Further efforts have to be expended to find relations between the growth paramet
 Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates.
 Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates, which will be exclusively reviewed in the following.
 
+The availability and reproducibility of Si substrates of controlled purity made it the first choice for SiC epitaxy.
+The heteroepitaxial growth of SiC on Si substrates has been stimulated for a long time due to the lack of suitable large substrates that could be adopted for homoepitaxial growth.
+Furthermore, heteroepitaxy on Si substrates enables the fabrication of the advantageous 3C polytype, which constitutes a metastable phase and, thus, can be grown as a bulk crystal only with small sizes of a few mm.
 
 
 \section{Ion beam synthesis of cubic silicon carbide}