+In the classical potential calculations defect structures are modeled in a supercell of nine Si lattice constants in each direction consisting of 5832 Si atoms.
+Reproducing SiC precipitation is attempted by successive insertion of 6000 C atoms to form a minimal 3C-SiC precipitate with a radius of about \unit[3.1]{nm} into the Si host, which has a size of 31 Si unit cells in each direction consisting of 238328 Si atoms.
+At constant temperature 10 atoms are inserted at a time.
+Three different regions within the total simulation volume are considered for a statistically distributed insertion of the C atoms: $V_1$ corresponding to the total simulation volume, $V_2$ corresponding to the size of the precipitate and $V_3$, which holds the necessary amount of Si atoms of the precipitate.
+After C insertion, the simulation has been continued for \unit[100]{ps} and is cooled down to \unit[20]{$^{\circ}$C} afterwards.
+A Tersoff-like bond order potential by Erhart and Albe (EA)\cite{albe_sic_pot} has been utilized, which accounts for nearest neighbor interactions realized by a cut-off function dropping the interaction to zero in between the first and second nearest neighbor distance.
+The potential was used as is, i.e. without any repulsive potential extension at short interatomic distances.
+Constant pressure simulations are realized by the Berendsen barostat\cite{berendsen84} using a time constant of \unit[100]{fs} and a bulk modulus of \unit[100]{GPa} for Si.
+The temperature was kept constant by the Berendsen thermostat\cite{berendsen84} with a time constant of \unit[100]{fs}.
+Integration of the equations of motion was realized by the velocity Verlet algorithm\cite{verlet67} and a fixed time step of \unit[1]{fs}.
+For structural relaxation of defect structures, the same algorithm was used with the temperature set to 0 K.
+