+The focus of SiC based applications, however, is in the area of solid state electronics experiencing revolutionary performance improvements enabled by its capabilities.
+These devices include ultraviolet (UV) detectors, radio frequency (RF) amplifiers, rectifiers, switching transistors and MEMS applications.
+For UV dtectors the wide band gap is useful for realizing low photodiode dark currents as well as sensors that are blind to undesired near-infrared wavelenghts produced by heat and solar radiation.
+These photodiodes serve as excellent sensors applicable for monitoring and control of turbine engine combustion.
+The low dark currents enable the use for X-ray, heavy ion and neutron detection in nuclear reactor monitoring and enhanced scientific studies of high-energy particle collisions as well as cosmic radiation.
+The high breakdown field and carrier saturation velocity coupled with the high thermal conductivity allow SiC RF transistors to handle much higher power densities and frequencies in stable operation at high temperatures.
+Smaller transistor sizes and less cooling requirements lead to a reduced overall size and cost of these systems.
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