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-Negligible junction leakage currents at elevated temperatures due to the high band gap allow high-temperature operations without excessive leakage.
-Even non-volatile dynamic random access memory (DRAM) at room temperature can generally be realized by SiC based electronics~\cite{}.
-Additionally the wide band gap allows SiC to be used in UV detectors.
-The high saturation electron drift velocity provides higher currents and higher cut-off frequencies for SiC based high-frequency and high-power devices, such as microwave devices.
-The high breakdown strength enables the realization of electronic switching devices enduring high power densities.
-The high thermal conductivity permits ...
+Its formidable mechanical stability, heat resistant, radiation hardness and low neutron capture radius cross section allow operation in harsh and radiation-hard environments~\cite{capano97}.