-Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the change in the surface superstructure, which gives atomic level control in the growth process \cite{fuyuki89}.
-in more detail ... \cite{yoshinobu90}.
-3C on 3C homoepitaxy by ALE \cite{fuyuki89,fuyuki93,hara93}
+Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the periodical change in the surface superstructure by the alternating supply of the source gases, which determines the growth rate giving atomic level control in the growth process \cite{fuyuki89}.
+The cleaned substrate surface shows a $(1\times 1)$ pattern at \unit[1000]{$^{\circ}$C}, which turns into a $(3\times 2)$ pattern when Si$_2$H$_6$ is introduced and it is maintained after the supply is stopped.
+A more detailed investigation showed the formation of a preceeding $(2\times 1)$ pattern within the exposure to the Si containing gas \cite{yoshinobu90}.
+The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms.
+The insertion of C$_2$H$_6$ leads to a reconstruction of the surface into the initial $(1\times 1)$ pattern and the formation of crystalline 3C-SiC with a smooth and mirror-like surface after an appropriate number of cycles.
+The growth rate ... higher, due to physically adsorbed Si, which depends on Si supply ...
+Not really ALE ... 1.7 monolayers per cycle ... now real ALE \cite{fuyuki93,hara93}