+\begin{slide}
+
+ {\large\bf\boldmath
+ Defect configurations revisited
+ }
+
+ \underline{$4\times 4\times 3$ Type 1}
+
+ \small
+
+ \begin{tabular}{l|l|p{2.5cm}|p{4cm}|}
+ & \hkl<0 0 -1> interstitial
+ & local minimum\newline
+ \hkl<1 1 0> C-Si split
+ & intermediate configuration\newline
+ (bond centered conf)\\
+ \hline
+ default & $E_{\text{f}}=3.3254\text{ eV}$
+ & $E_{\text{f}}=4.1314\text{ eV}$
+ & $E_{\text{f}}=4.2434\text{ eV}$ \\
+ \hline
+ No symmetry & $E_{\text{f}}=3.3154\text{ eV}$
+ & TODO
+ & $E_{\text{f}}=4.2454\text{ eV}$ \\
+ \hline
+ $+$ spin polarized & $E_{\text{f}}=3.3154\text{ eV}$
+ & TODO
+ & $E_{\text{f}}=4.0254\text{ eV}$ \\
+ \hline
+ $+$ spin difference 2 & in progress & TODO & in progress \\
+ \hline
+ \end{tabular}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ \hkl<0 0 -1> to \hkl <0 0 1> migration
+ in the $3\times 3\times 3$ Type 2 supercell
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ \hkl<0 0 -1> to \hkl <0 -1 0> migration
+ in the $3\times 3\times 3$ Type 2 supercell
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Defect configurations in $3\times 3\times 3$ Type 2 supercells revisited
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Combination of defects
+ }
+
+ TODO: introduce some Si self-interstitials and C interstitials before\\
+ BUT: Concentrate on 100 C interstitial combinations and 100 C + vacancy\\
+
+ Agglomeration of 100 defects energetically favorable?
+
+\end{slide}
+