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hackbard
<hackbard@sage.physik.uni-augsburg.de>
Fri, 30 Apr 2010 14:12:11 +0000
(16:12 +0200)
committer
hackbard
<hackbard@sage.physik.uni-augsburg.de>
Fri, 30 Apr 2010 14:12:11 +0000
(16:12 +0200)
posic/thesis/md.tex
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b/posic/thesis/md.tex
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--- a/
posic/thesis/md.tex
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posic/thesis/md.tex
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-412,6
+412,7
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Furthermore these investigations might establish the prediction of conditions ne
To construct a spherical and topotactically aligned 3C-SiC precipitate in c-Si, the approach illustrated in the following is applied.
A total simulation volume $V$ consisting of 21 unit cells of c-Si in each direction is used.
To obtain a minimal and stable precipitate 5500 carbon atoms are considered necessary.
To construct a spherical and topotactically aligned 3C-SiC precipitate in c-Si, the approach illustrated in the following is applied.
A total simulation volume $V$ consisting of 21 unit cells of c-Si in each direction is used.
To obtain a minimal and stable precipitate 5500 carbon atoms are considered necessary.
+This corresponds to a spherical 3C-SiC precipitate with a radius of approximately 3 nm.
The initial precipitate configuration is constructed in two steps.
In the first step the surrounding silicon matrix is created.
This is realized by just skipping the generation of silicon atoms inside a sphere of radius $x$, which is the first unknown variable.
The initial precipitate configuration is constructed in two steps.
In the first step the surrounding silicon matrix is created.
This is realized by just skipping the generation of silicon atoms inside a sphere of radius $x$, which is the first unknown variable.