-\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at \ac{RT} followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+Implantations at different temperatures revealed a strong influences of the implantation temperature on the compound structure \cite{edelman76}.
+Temperatures below \unit[500]{$^{\circ}$C} result in amorphous layers, which is transformed into polycrystalline 3C-SiC after \unit[850]{$^{\circ}$C} annealing \cite{edelman76}.
+Otherwise single crystalline 3C-SiC is observed for temperatures above \unit[600]{$^{\circ}$C}.