-In the first case these occupied states would be expected to be higher in energy than the states occupied at low temperatures.
-Since substitutional C without the presence of a Si self-interstitial is energetically more favorable than the lowest defect structure obtained without removing a Si atom, that is the \hkl<1 0 0> dumbbell interstitial, and the migration of Si self-interstitials towards the sample surface can be assumed for real life experiments \cite{}, this approach is accepted as an accelerated way of approximatively describing the structural evolution.
-{\color{red}Todo: C sub and Si self-int is energetically less favorable! Maybe fast migration of Si (mentioned in another Todo)? If true, we have to care about Si removal in simulations? In any way these findings suggest a different prec model.}
+As already pointed out in section~\ref{section:defects:noneq_process_01} on page~\pageref{section:defects:noneq_process_01} and section~\ref{section:defects:noneq_process_02} on page~\pageref{section:defects:noneq_process_02} IBS is a nonequilibrium process, which might result in the formation of the thermodynamically less stable substitutional carbon and Si self-interstitital configuration.
+Indeed 3C-SiC is metastable and if not fabricated by IBS requires strong deviation from equilibrium and/or low temperatures to stabilize the 3C polytype \cite{}.
+In IBS highly energetic C atoms are able to generate vacant sites, which in turn can be occupied by highly mobile C atoms.
+This is found to be favorable in the absence of the Si self-interstitial, which turned out to have a low interaction capture radius with a substitutional C atom very likely preventing the recombination into thermodynamically stable C-Si dumbbell interstitials for appropriate separations of the defect pair.
+Results gained in this chapter show preferential occupation of Si lattice sites by substitutional C enabled by increased temperatures supporting the assumptions drawn from the defect studies of the last chapter.
+
+Thus, employing increased temperatures is not exclusively usefull to accelerate the dynamics approximatively describing the structural evolution.
+Moreover it can be considered a necessary condition to deviate the system out of equilibrium enabling the formation of 3C-SiC obviously realized by a successive agglomeration of substitutional C.
+}