-\ifnum1=0
-\begin{slide}
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-\headphd
- {\large\bf
- Fabrication of silicon carbide
- }
-
- \small
-
- \vspace{2pt}
-
-\begin{center}
- {\color{gray}
- \emph{Silicon carbide --- Born from the stars, perfected on earth.}
- }
-\end{center}
-
-\vspace{2pt}
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-SiC thin films by MBE \& CVD
-\begin{itemize}
- \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
- \item \underline{Commercially available} semiconductor power devices based on
- \underline{\foreignlanguage{greek}{a}-SiC}
- \item Production of favored \underline{3C-SiC} material
- \underline{less advanced}
- \item Quality and size not yet sufficient
-\end{itemize}
-\begin{picture}(0,0)(-310,-20)
- \includegraphics[width=2.0cm]{cree.eps}
-\end{picture}
-
-\vspace{-0.5cm}
-
-%\begin{center}
-%\color{red}
-%\framebox{
-%{\footnotesize\color{black}
-% Mismatch in \underline{thermal expansion coeefficient}
-% and \underline{lattice parameter} w.r.t. substrate
-%}
-%}
-%\end{center}
-
-\vspace{0.1cm}
-
-{\bf Alternative approach}\\
-Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
-
-\vspace{0.1cm}
-
-\scriptsize
-
-\framebox{
-\begin{minipage}{3.15cm}
- \begin{center}
-\includegraphics[width=3cm]{imp.eps}\\
- {\tiny
- Carbon implantation
- }
- \end{center}
-\end{minipage}
-\begin{minipage}{3.15cm}
- \begin{center}
-\includegraphics[width=3cm]{annealing.eps}\\
- {\tiny
- Postannealing at $>$ \degc{1200}
- }
- \end{center}
-\end{minipage}
-}
-\begin{minipage}{5.5cm}
- \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
- \begin{center}
- {\tiny
- XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{center}
-\end{minipage}
-
-%\begin{minipage}{5.5cm}
-%\begin{center}
-%{\footnotesize
-%No surface bending effects\\
-%High areal homogenity\\[0.1cm]
-%$\Downarrow$\\[0.1cm]
-%Synthesis of large area SiC films possible
-%}
-%\end{center}
-%\end{minipage}
-
-\end{slide}
-\fi
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