new literature + some more on bulk growth

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 372a642f5ac031151cc9bf528e44d78e8767e2e1..2ca9532e2551caef337615a819a511a2f0002051 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1491,18 +1491,6 @@
   notes =        "sic intro, properties",
 }
 
   notes =        "sic intro, properties",
 }
 

-@Article{neudeck95,
-  author =       "P. G. Neudeck",
-  title =        "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
-                 {ELECTRONICS} {TECHNOLOGY}",
-  journal =      "Journal of Electronic Materials",
-  year =         "1995",
-  volume =       "24",
-  number =       "4",
-  pages =        "283--288",
-  month =        apr,
-}
-

 @Article{foo,
   author =       "Noch Unbekannt",
   title =        "How to find references",
 @Article{foo,
   author =       "Noch Unbekannt",
   title =        "How to find references",


@@ -1619,6 +1607,54 @@
   author =       "Yu.M. Tairov and V. F. Tsvetkov",
 }
 
   author =       "Yu.M. Tairov and V. F. Tsvetkov",
 }
 

+@Article{barrett91,
+  title =        "Si{C} boule growth by sublimation vapor transport",
+  journal =      "Journal of Crystal Growth",
+  volume =       "109",
+  number =       "1-4",
+  pages =        "17--23",
+  year =         "1991",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(91)90152-U",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+  author =       "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+                 R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+  title =        "Growth of large Si{C} single crystals",
+  journal =      "Journal of Crystal Growth",
+  volume =       "128",
+  number =       "1-4",
+  pages =        "358--362",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(93)90348-Z",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+  author =       "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+                 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+                 W. J. Choyke",
+}
+
+@Article{stein93,
+  title =        "Control of polytype formation by surface energy
+                 effects during the growth of Si{C} monocrystals by the
+                 sublimation method",
+  journal =      "Journal of Crystal Growth",
+  volume =       "131",
+  number =       "1-2",
+  pages =        "71--74",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(93)90397-F",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+  author =       "R. A. Stein and P. Lanig",
+  notes =        "6h and 4h, sublimation technique",
+}
+

 @Article{nishino83,
   author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
                  Will",
 @Article{nishino83,
   author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
                  Will",


@@ -3244,5 +3280,77 @@
                  optimization",
   URL =          "http://link.aip.org/link/?JAP/53/6962/1",
   doi =          "10.1063/1.330041",
                  optimization",
   URL =          "http://link.aip.org/link/?JAP/53/6962/1",
   doi =          "10.1063/1.330041",

+  notes =        "blue led, sublimation process",

 }
 
 }
 

+@Article{neudeck95,
+  author =       "Philip Neudeck",
+  affiliation =  "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+                 Road 44135 Cleveland OH",
+  title =        "Progress in silicon carbide semiconductor electronics
+                 technology",
+  journal =      "Journal of Electronic Materials",
+  publisher =    "Springer Boston",
+  ISSN =         "0361-5235",
+  keyword =      "Chemistry and Materials Science",
+  pages =        "283--288",
+  volume =       "24",
+  issue =        "4",
+  URL =          "http://dx.doi.org/10.1007/BF02659688",
+  note =         "10.1007/BF02659688",
+  year =         "1995",
+  notes =        "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+  author =       "M. Bhatnagar and B. J. Baliga",
+  journal =      "Electron Devices, IEEE Transactions on",
+  title =        "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+                 devices",
+  year =         "1993",
+  month =        mar,
+  volume =       "40",
+  number =       "3",
+  pages =        "645--655",
+  keywords =     "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+                 rectifiers;Si;SiC;breakdown voltages;drift region
+                 properties;output characteristics;power MOSFETs;power
+                 semiconductor devices;switching characteristics;thermal
+                 analysis;Schottky-barrier diodes;electric breakdown of
+                 solids;insulated gate field effect transistors;power
+                 transistors;semiconductor materials;silicon;silicon
+                 compounds;solid-state rectifiers;thermal analysis;",
+  doi =          "10.1109/16.199372",
+  ISSN =         "0018-9383",
+  notes =        "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+  author =       "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+                 A. Powell and C. S. Salupo and L. G. Matus",
+  journal =      "Electron Devices, IEEE Transactions on",
+  title =        "Electrical properties of epitaxial 3{C}- and
+                 6{H}-Si{C} p-n junction diodes produced side-by-side on
+                 6{H}-Si{C} substrates",
+  year =         "1994",
+  month =        may,
+  volume =       "41",
+  number =       "5",
+  pages =        "826--835",
+  keywords =     "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+                 C;6H-SiC layers;6H-SiC substrates;CVD
+                 process;SiC;chemical vapor deposition;doping;electrical
+                 properties;epitaxial layers;light
+                 emission;low-tilt-angle 6H-SiC substrates;p-n junction
+                 diodes;polytype;rectification characteristics;reverse
+                 leakage current;reverse voltages;temperature;leakage
+                 currents;power electronics;semiconductor
+                 diodes;semiconductor epitaxial layers;semiconductor
+                 growth;semiconductor materials;silicon
+                 compounds;solid-state rectifiers;substrates;vapour
+                 phase epitaxial growth;",
+  doi =          "10.1109/16.285038",
+  ISSN =         "0018-9383",
+  notes =        "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+                 substrate",
+}

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index d8adcbe6301e8dd2087dbb15ad1f336ef9721469..9039f7d6dbd26aa268a9d6ec6354f16ac70204ae 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -136,10 +136,15 @@ Subsequent research \cite{tairov78,tairov81} resulted in the implementation of a
 In the so called modified Lely or modified sublimation process nucleation occurs on a SiC seed crystal located at the top or bottom of a cylindrical growth cavity.
 As in the Lely process, SiC sublimes at a temperature of \unit[2400]{$^{\circ}$C} from a polycrystalline source diffusing through a porous graphite retainer along carefully adjusted thermal and pressure gradients.
 Controlled nucleation occurs on the SiC seed, which is held at approximately \unit[2200]{$^{\circ}$C}.
 In the so called modified Lely or modified sublimation process nucleation occurs on a SiC seed crystal located at the top or bottom of a cylindrical growth cavity.
 As in the Lely process, SiC sublimes at a temperature of \unit[2400]{$^{\circ}$C} from a polycrystalline source diffusing through a porous graphite retainer along carefully adjusted thermal and pressure gradients.
 Controlled nucleation occurs on the SiC seed, which is held at approximately \unit[2200]{$^{\circ}$C}.

-The growth process is commonly done in a high-purity Ar atmosphere.
-Refined versions of this physical vapor transport (PVT) technique enabled the reproducible boule growth of device quality SiC crystals, which were for instance used to fabricate blue light emitting diodes with increased quantum efficiencies \cite{hoffmann82}.
+The growth process is commonly done in a high-purity argon atmosphere.
+The method was successfully applied to grow 6H and 4H boules with diameters up to \unit[60]{mm} \cite{tairov81,barrett91,barrett93,stein93}.
+This refined versions of the physical vapor transport (PVT) technique enabled the reproducible boule growth of device quality SiC crystals, which were for instance used to fabricate blue light emitting diodes with increased quantum efficiencies \cite{hoffmann82}.

 
 

-though significant advances have been achieved a bunch of defects ...
+Although significant advances have been achieved in the field of SiC bulk crystal growth, a variety of problems remain.
+The high temperatures required in PVT growth processes limit the range of materials used in the hot zones of the reactors, for which mainly graphite is used.
+The porous material constitutes a severe source of contamination ...
+
+These defects include growth spirals (stepped screw dislocations), subgrain boundaries as well as micropipes (micron sized voids extending along the c axis of the crystal) in the hexagonal polytypes.

 
 \subsection{SiC epitaxial thin film growth}
 
 
 \subsection{SiC epitaxial thin film growth}