+Formation energies of the most common carbon point defects in crystalline silicon are summarized in table \ref{tab:defects:c_ints}.
+\begin{table}[h]
+\begin{center}
+\begin{tabular}{l c c c c c c}
+\hline
+\hline
+ & T & H & \hkl<1 0 0> DB & \hkl<1 1 0> DB & S & B \\
+\hline
+ Erhard/Albe MD & 5.41 & 8.37$^*$ & 3.21 & 4.50 & 0.07 & 4.91$^*$ \\
+ VASP & unstable & unstable & 3.15 & 3.60 & 1.39 & 4.10 \\
+ Tersoff \cite{tersoff90} & 3.8 & 6.7 & 4.6 & 5.9 & 1.6 & 5.3 \\
+ ab initio & - & - & x & - & 1.89 \cite{dal_pino93} & x+2.1 \cite{capaz94} \\
+\hline
+\hline
+\end{tabular}
+\end{center}
+\caption[Formation energies of carbon point defects in crystalline silicon determined by classical potential molecular dynamics and density functional calculations.]{Formation energies of carbon point defects in crystalline silicon determined by classical potential molecular dynamics and density functional calculations. The formation energies are given in eV. T denotes the tetrahedral, H the hexagonal, B the bond-centered and S the substitutional interstitial configuration. The dumbbell configurations are abbreviated by DB. Formation energies for unstable configurations are marked by an asterisk and determined by using the low kinetic energy configuration shortly before the relaxation into the more favorable configuration starts.}
+\label{tab:defects:c_ints}
+\end{table}
+Except for Tersoff's tedrahedral configuration results the \hkl<1 0 0> dumbbell is the energetically most favorable configuration for all types of interaction models.
+The low energy of formation for the tetrahedral interstitial in the case of the Tersoff potential is believed to be an artifact of the short cutoff (see Ref. 13 in \cite{tersoff90}) and the real formation energy is supposed to be located between 3 and 10 eV.
+