-As a result of the supersaturation of carbon atoms in silicon there is a nucleation of spherical $SiC_x$-precipitates. The almost $20\%$ lattice misfit of the diamond lattice of crystalline silicon ($c-Si$, $a=0.543 \, nm$) to the cubic polytype of $SiC$ ($3C-SiC$, $a=0.436 \, nm$) causes a large interfacial energy, which could be reduced if one of the participants exists in the amorphous phase. It has been shown \cite{1} that $SiC$ turns into the amorphous phase. In fact, amorphous silicon ($a-Si$) would recrystallize under the granted conditions due to ion beam induced recrystallization. Stoichiometric $SiC$ has a smaller atomic density than $c-Si$. The same is assumed for substoichiometric $a-SiC_x$. Hence the amorphous $SiC_x$ is anxious to expand, and as a result compressive stress is applied on the $Si$ host lattice. As the process occurs near the targets surface, the stress is relaxing in vertical direction and there is just lateral stress remaining. Thus volumes between amorphous inclusions will more likely turn into amorphous phase, as the stress aggravates the reassembly of the atoms on their lattice site, while amorphous volumes located in a crystalline neighbourhood will recrystallize in all probability. In addition carbon diffuses to the amorphous volumes in order to reduce the supersaturation of carbon in the crystalline volumes. As a consequence the amorphous volumes hold plenty of carbon.
+As a result of the supersaturation of carbon atoms in silicon there is a nucleation of spherical $SiC_x$-precipitates. The almost $20\%$ lattice misfit of the diamond lattice of crystalline silicon ($c-Si$, $a=0.543 \, nm$) to the cubic polytype of $SiC$ ($3C-SiC$, $a=0.436 \, nm$) causes a large interfacial energy, which could be reduced if one of the participants exists in the amorphous phase. It has been shown \cite{1} that $SiC$ turns into the amorphous phase. In fact, amorphous silicon ($a-Si$) would recrystallize under the granted conditions due to ion beam induced recrystallization. Stoichiometric $SiC$ has a smaller atomic density than $c-Si$. The same is assumed for substoichiometric $a-SiC_x$. Hence the amorphous $SiC_x$ tends to expand, and as a result compressive stress is applied on the $Si$ host lattice. As the process occurs near the targets surface, the stress is relaxing in vertical direction and there is just lateral stress remaining. Thus volumes between amorphous inclusions will more likely turn into amorphous phase, as the stress hampers the reassembly of the atoms on their lattice site, while amorphous volumes located in a crystalline neighbourhood will recrystallize in all probability. In addition carbon diffuses to the amorphous volumes in order to reduce the supersaturation of carbon in the crystalline volumes. As a consequence the amorphous volumes hold plenty of carbon.