-This is also true for peaks located past distances of next neighbours indicating an increase in the long range order.
-However this change is rather small and no significant structural change is observeable.
-Due to the continuity of high amounts of damage atomic configurations remain hard to identify even for the highest temperature.
-Other than in the low concentration simulation analyzed defect structures are no longer necessarily aligned to the primarily existing but succesively disappearing c-Si host matrix inhibiting or at least hampering their identification and classification.
-As for low temperatures order in the short range exists decreasing with increasing distance.
-The increase of the amount of Si-C pairs at 0.186 nm could be positively interpreted since this type of bond also exists in 3C-SiC.
-On the other hand the amount of next neighboured C atoms with a distance of approximately 0.15 nm, which is the distance of C in graphite or diamond, is likewise increased.
-Thus, higher temperatures seem to additionally enhance a conflictive process, that is the formation of C agglomerates, instead of the desired process of 3C-SiC formation.
-This is supported by the C-C peak at 0.252 nm, which corresponds to the second next neighbour distance in the diamond structure of elemental C.
-Investigating the atomic data indeed reveals two C atoms which are bound to and interconnected by a third C atom to be responsible for this distance.
-The C-C peak at about 0.31 nm, wich is slightly shifted to higher distances (0.317 nm) with increasing temperature still corresponds quite well to the next neighbour distance of C in 3C-SiC as well as a-SiC and indeed results from C-Si-C bonds.
-The Si-C peak at 0.282 nm, which is pronounced with increasing temperature is constructed out of a Si atom and a C atom, which are both bound to another central C atom.
-This is similar for the Si-C peak at approximately 0.35 nm.
+This is also true for peaks located past distances of next neighbors indicating an increase in the long range order.
+However, this change is rather small and no significant structural change is observeable.
+Due to the continuity of high amounts of damage, atomic configurations remain hard to identify even for the highest temperature.
+Other than in the low concentration simulation, analyzed defect structures are no longer necessarily aligned to the primarily existing but succesively disappearing c-Si host matrix inhibiting or at least hampering their identification and classification.
+As for low temperatures, order in the short range exists decreasing with increasing separation.
+The increase of the amount of Si-C pairs at \distn{0.186} could be positively interpreted since this type of bond also exists in 3C-SiC.
+On the other hand, the amount of next neighbored C atoms with a distance of approximately \distn{0.15}, which is the distance of C in graphite or diamond, is likewise increased.
+Thus, higher temperatures seem to additionally enhance a conflictive process, i.e. the formation of C agglomerates, obviously inconsistent with the desired process of 3C-SiC formation.
+This is supported by the C-C peak at \distn{0.252}, which corresponds to the second next neighbor distance in the diamond structure of elemental C.
+Investigating the atomic data indeed reveals two C atoms, which are bound to and interconnected by a third C atom, to be responsible for this distance.
+The C-C peak at about \distn{0.31}, wich is slightly shifted to higher distances (\distn{0.317}) with increasing temperature still corresponds quite well to the next neighbor distance of C in 3C-SiC as well as a-SiC and indeed results from C-Si-C bonds.
+The Si-C peak at \distn{0.282}, which is pronounced with increasing temperature, is constructed out of a Si atom and a C atom, which are both bound to another central C atom.
+This is similar for the Si-C peak at approximately \distn{0.35}.