-A more detailed investigation showed the formation of a preceeding $(2\times 1)$ pattern within the exposure to the Si containing gas \cite{yoshinobu90}.
-The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms.
-The insertion of C$_2$H$_6$ leads to a reconstruction of the surface into the initial $(1\times 1)$ pattern and the formation of crystalline 3C-SiC with a smooth and mirror-like surface after an appropriate number of cycles.
-The growth rate ... higher, due to physically adsorbed Si, which depends on Si supply ...
-Not really ALE ... 1.7 monolayers per cycle ... now real ALE \cite{fuyuki93,hara93}
+A more detailed investigation showed the formation of a preceeding $(2\times 1)$ and $(5\times 2)$ pattern within the exposure to the Si containing gas \cite{yoshinobu90,fuyuki93}.
+The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms, crystallizing into 3C-SiC with a smooth and mirror-like surface after C$_2$H$_6$ is inserted accompanied by a reconstruction of the surface into the initial $(1\times 1)$ pattern.
+A minimal growth rate of 2.3 monolayers per cycle exceeding the value of 1.7 is due to physically adsorbed Si atoms not contributing to the superstructure, which depends on the supply of Si containing gas.
+Not really ALE ... 1.7 monolayers per cycle ... now real ALE \cite{hara93}