+\vspace{2pt}
+
+SiC thin film by MBE \& CVD
+\begin{itemize}
+ \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
+ \item \underline{Commercially available} semiconductor power devices based on
+ \underline{\foreignlanguage{greek}{a}-SiC}
+ \item Production of favored \underline{3C-SiC} material
+ \underline{less advanced}
+ \item Quality and size not yet sufficient
+\end{itemize}
+\begin{picture}(0,0)(-310,-20)
+ \includegraphics[width=2.0cm]{cree.eps}
+\end{picture}
+
+Alternative method: Ion beam synthesis of SiC in Si