Thus, higher temperatures seem to additionally enhance a conflictive process, i.e.\ the formation of C agglomerates, obviously inconsistent with the desired process of 3C-SiC formation.
This is supported by the C-C peak at \distn{0.252}, which corresponds to the second next neighbor distance in the diamond structure of elemental C.
Investigating the atomic data indeed reveals two C atoms, which are bound to and interconnected by a third C atom, to be responsible for this distance.
Thus, higher temperatures seem to additionally enhance a conflictive process, i.e.\ the formation of C agglomerates, obviously inconsistent with the desired process of 3C-SiC formation.
This is supported by the C-C peak at \distn{0.252}, which corresponds to the second next neighbor distance in the diamond structure of elemental C.
Investigating the atomic data indeed reveals two C atoms, which are bound to and interconnected by a third C atom, to be responsible for this distance.