-The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms, crystallizing into 3C-SiC with a smooth and mirror-like surface after C$_2$H$_6$ is inserted accompanied by a reconstruction of the surface into the initial $(1\times 1)$ pattern.
-A minimal growth rate of 2.3 monolayers per cycle exceeding the value of 1.7 is due to physically adsorbed Si atoms not contributing to the superstructure, which depends on the supply of Si containing gas.
-Not really ALE ... 1.7 monolayers per cycle ... now real ALE \cite{hara93}
-6H on 6H ... \cite{tanaka94}
+The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms, crystallizing into 3C-SiC with a smooth and mirror-like surface after C$_2$H$_6$ is inserted accompanied by a reconstruction of the surface into the initial C terminated $(2\times 2)$ pattern.
+A minimal growth rate of 2.3 monolayers per cycle exceeding the value of 1.7 is due to physically adsorbed Si atoms not contributing to the superstructure.
+To realize single monolayer growth precise control of the gas supply to form the $(2\times 1)$ structure is required.
+However, accurate layer-by-layer growth is achieved under certain conditions, which facilitate the spontaneous desorption of an additional layer of one atom species by supply of the other species \cite{hara93}.
+Homoepitaxial growth of the 6H polytype has been realized on off-oriented substrates utilizing simultaneous supply of the source gases \cite{tanaka94}.
+Depending on the gas flow ratio either island formation or step flow growth occurs, which is explained by a model including aspects of enhanced surface mobilities of adatoms on a reconstructed surface.
+{\color{red} Read, understand and mabye add a bit more.}
+