@@ -26,13+26,21 @@ The polytypes differ in the one-dimensional stacking sequence of identical, clos
Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
\begin{figure}[t]
\begin{center}
Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
+\hspace*{0.05cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.09cm} a\\
\caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
\label{fig:sic:polytypes}
\end{figure}
Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
\end{center}
\caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
\label{fig:sic:polytypes}
\end{figure}
Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
-\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite{wesch96,casady96,park98}.}
+\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite[]{wesch96,casady96,park98}.}
\label{table:sic:properties}
\end{table}
\label{table:sic:properties}
\end{table}
+\bibpunct{[}{]}{,}{n}{}{}
% todo add more refs + check all values!
Different polytypes of SiC exhibit different properties.
Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
% todo add more refs + check all values!
Different polytypes of SiC exhibit different properties.
Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
@@ -421,5+430,3 @@ On the other hand, processes relying upon prevention of precipitation in order t
% strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
% serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates
% strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
% serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates