+Although high-quality SiC can be achieved by means of IBS the precipitation mechanism is not yet fully understood.
+High resolution transmisson electron microscopy (HRTEM) studies indicate the formation of C-Si interstitial complexes sharing conventional silicon lattice sites (C-Si dumbbells) during the implantation of carbon in silicon.
+These C-Si dumbbells agglomerate and once a critical radius is reached, the topotactic transformation into a SiC precipitate occurs \cite{werner97,lindner01}.
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+A better understanding of the supposed SiC conversion mechanism and related carbon-mediated effects in silicon will enable significant technological progress in SiC thin film formation on the one hand and likewise offer perspectives for processes which rely upon prevention of precipitation events for improved silicon based devices on the other hand.
+Implanted carbon is known to suppress transient enhanced diffusion (TED) of dopant species like boron or phosphorus in the annealing step \cite{cowner96} which can be exploited to create shallow p-n junctions in submicron technologies.
+Si self-interstitials (Si$_{\text{i}}$), known as the transport vehicles for dopants \cite{fahey89,stolk95}, get trapped by reacting with the carbon atoms.
+Furthermore carbon insertion can be used to taylor the electronic properties of ...
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+Strained silicon to achieve higher charge carrier velocities ...