-The interstitial atom positions are displayed in Fig. \ref{fig:defects:ins_pos}.
-In seperated simulation runs the silicon or carbon atom is inserted at the tetrahedral $(0,0,0)$ ({\color{red}$\bullet$}), the hexagonal $(-1/8,-1/8,1/8)$ ({\color{green}$\bullet$}), the nearly \hkl<1 0 0> dumbbell $(-1/4,-1/4,-1/8)$ ({\color{yellow}$\bullet$}) and the nearly \hkl<1 1 0> dumbbell $(-1/8,-1/8,-1/4)$ ({\color{magenta}$\bullet$}) interstitial position.
-For the dumbbell configurations the nearest silicon atom is displaced by $(0,0,-1/8)$ and $(-1/8,-1/8,0)$ respectively of the unit cell length to avoid to high forces.
+The interstitial atom positions are displayed in figure \ref{fig:defects:ins_pos}.
+In seperated simulation runs the silicon or carbon atom is inserted at the
+\begin{itemize}
+ \item tetrahedral, $\vec{p}=(0,0,0)$, ({\color{red}$\bullet$})
+ \item hexagonal, $\vec{p}=(-1/8,-1/8,1/8)$, ({\color{green}$\bullet$})
+ \item nearly \hkl<1 0 0> dumbbell, $\vec{p}=(-1/4,-1/4,-1/8)$, ({\color{yellow}$\bullet$})
+ \item nearly \hkl<1 1 0> dumbbell, $\vec{p}=(-1/8,-1/8,-1/4)$, ({\color{magenta}$\bullet$})
+ \item bond-centered, $\vec{p}=(-1/8,-1/8,-3/8)$, ({\color{cyan}$\bullet$})
+\end{itemize}
+interstitial position.
+For the dumbbell configurations the nearest silicon atom is displaced by $(0,0,-1/8)$ and $(-1/8,-1/8,0)$ respectively of the unit cell length to avoid too high forces.