+
+the radial distribution Si-C, C-C and Si-Si bonds of simulations,
+in which C was inserted at 450 dc,
+an operative and efficient temperature in ibs, are shown.
+
+for the low C concentration simulation, i.e. the v1 simulation,
+a clearly 100 C-Si db dominated structure is obtained,
+which is obvious by comparing it to the
+reference distribution generated by a single Ci defect.
+the second peak is a cut-off artifact,
+correpsonding to the Si-C cut-off distance of 0.26 nm.
+the C-C peak at 0.31 nm, as expected in cubic SiC,
+is generated by concatenated, differently oriented Ci dbs.
+the same distance is also expected for the Si atoms, and, indeed,
+the db structure stretches the Si-Si next neighbor distance,
+which is represented by nonzero values in the correlation function.
+
+so, the formation of Ci dumbbells indeed occurs.
+even the C atoms are already found in a separation as expected in cubic SiC.
+
+turning to the high C concentration simulations, i.e. the v1 and v2 simulation,
+a high amount of strongly bound C-C bonds
+as in graphite or diamond are observed.
+an increased defect and damage density is obtained,
+which makes it hard to categorize and trace defect arrangements.
+only short range orde is observed.
+and, indeed, comparing to other distribution data, an amorphous SiC-like
+phase is obtained.
+