+Another promising alternative to fabricate SiC is ion beam synthesis (IBS).
+High-dose carbon implantation into silicon with subsequent annealing results in the formation of buried epitaxial SiC layers in topotactic relationship with the silicon matrix \cite{borders71,reeson87}.
+A two-temperature implantation technique was proposed to achieve single crytalline SiC layers and a sharp SiC/Si interface \cite{lindner99,lindner01,lindner02}.
+Hier Ueberleitung rein ...
+To observe the nucleation of SiC nanocrystals in crystalline silicon (c-Si) elevated temperatures and stoichiometric doses exceeding the solubility limit of carbon in silicon \cite{scace59} are required.