-The influence of Si self-interstitials on the diffusion of a single carbon atom is displayed in Fig. 3.
-Diffusion coefficients for different amount of Si self-interstitials are shown.
-A slight increase is first observed in the case of 30 interstitial atoms.
-Further increasing the amount of interstitials leads to a tremendous decay of the diffusion coeeficient.
-Generally there is no long range diffusion of the carbon atom for a temperature of $450\, ^{\circ} \textrm{C}$.
-The maximal displacement of the carbon atom relativ to its insertion position is between 0.5 and 0.7 \AA.
+
+%\begin{figure}[!h]
+% \begin{center}
+% \includegraphics[width=12cm]{../plot/diff_dep.ps}
+% \caption{Diffusion coefficients of a single carbon atom for different amount of Si selft interstitials}
+% \end{center}
+%\end{figure}
+%The influence of Si self-interstitials on the diffusion of a single carbon atom is displayed in Fig. 3.
+%Diffusion coefficients for different amount of Si self-interstitials are shown.
+%A slight increase is first observed in the case of 30 interstitial atoms.
+%Further increasing the amount of interstitials leads to a tremendous decay of the diffusion coeeficient.
+%Generally there is no long range diffusion of the carbon atom for a temperature of $450\, ^{\circ} \textrm{C}$.
+%The maximal displacement of the carbon atom relativ to its insertion position is between 0.5 and 0.7 \AA.