-Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates \cite{yoshinobu92}.
-On \hkl(000-1) substrates ...
-gas source ... 3C homoeptiaxy \cite{yoshinobu90}
+Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates at temperatures between \unit[850]{$^{\circ}$C} and \unit[1000]{$^{\circ}$C} \cite{yoshinobu92}.
+On \hkl(000-1) substrates twinned \hkl(-1-1-1) oriented 3C-SiC domains are observed, which suggest a nucleation driven rather than step-flow growth mechanism.
+On \hkl(0-11-4) substrates, however, single crystalline \hkl(001) oriented 3C-SiC grows with the c axes of substrate and film being equal.
+The beneficial epitaxial relation of substrate and film limits the structural difference between the two polytypes in two out of six layers with respect to the stacking sequence along the c axis.
+Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the change in the surface superstructure, which gives atomic level control in the growth process \cite{fuyuki89}.
+in more detail ... \cite{yoshinobu90}.