+While first versions of this simulation, just covering a limit depth region of the target in which selforganization is observed, have already been discussed in \cite{me1,me2}, only results of the new version, which is able to model the whole depth region affected by the irradiation process, will be presented.
+
+A set of simulation parameters exists to properly describe the fluence dependent formation of the amorphous phase, as can be seen in Fig \ref{img:dose_cmp}.
+\ldots
+
+By simulation it is possible to determine the carbon concentration in crystalline, amorphous and both volumes.
+Fig. \ref{img:carbon_distr} \ldots
+
+Based on simulation runs a recipe is proposed to create broad distributions of lamellar structure.
+The starting point is a crystalline silcon target with a nearly constant carbon concentration of $10 \, at.\%$ starting from the surfcae downto $500 \, nm$, which can be achieved by multiple carbon implantation steps with energies between $180$ and $10 \, keV$ at a temperature $T=500 \, ^{\circ} \mathrm{C}$ to prevent amorphization \cite{sputter}.
+In a second step the target is irradiated with $2 \, MeV$ $C^+$ ions, which have a nearly constant energy loss and an essentially zero implantation profile in the affected depth region.
+The result is displayed in Fig. \ref{img:broad_lam}, showing already ordered structures after $s=100 \times 10^6$ steps corresponding to a fluence of $D=2.7 \times 10^{17} cm^{-2}$.
+The structure gets more defined with increasing fluence.
+According to recent studies \cite{photo} these structures are the starting point for materials showing high photoluminescence.