+\begin{figure}[!ht]
+\begin{center}
+ \includegraphics[width=12cm]{sic_prec_450_si-c.ps}
+\end{center}
+\caption{Radial distribution function of the Si-C distances for 6000 carbon atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of $450\,^{\circ}\mathrm{C}$ and cooled down to room temperature together with Si-C bonds resulting in a C-Si \hkl<1 0 0> dumbbell configuration.}
+\label{fig:md:pc_si-c}
+\end{figure}
+Figure \ref{fig:md:pc_si-c} displays the Si-C radial distribution function for all three insertion volumes together with the Si-C bonds as observed in a C-Si \hkl<1 0 0> dumbbell configuration.
+The first peak observed for all insertion volumes is at approximately 0.185 nm.
+This corresponds quite well to the expected next neighbour distance of 0.189 nm for Si and C atoms in 3C-SiC.
+
+