+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Journal of Applied Physics",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional
+ carbon",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Journal of Applied Physics",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c int to c sub trafo",
+}
+
+@Article{lucas10,
+ author = "G Lucas and M Bertolus and L Pizzagalli",
+ title = "An environment-dependent interatomic potential for
+ silicon carbide: calculation of bulk properties,
+ high-pressure phases, point and extended defects, and
+ amorphous structures",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "22",
+ number = "3",
+ pages = "035802",
+ URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+ year = "2010",
+ notes = "edip sic",
+}