+In the following the 3C-SiC/c-Si interface is described in further detail.
+One important size analyzing the interface is the interfacial energy.
+It is determined exactly in the same way than the formation energy as described in equation \eqref{eq:defects:ef2}.
+Using the notation of table \ref{table:md:sic_prec} and assuming that the system is composed out of $N^{\text{3C-SiC}}_{\text{C}}$ C atoms forming the SiC compound plus the remaining Si atoms, the energy is given by
+\begin{equation}
+ E_{\text{f}}=E-
+ N^{\text{3C-SiC}}_{\text{C}} \mu_{\text{SiC}}-
+ \left(N^{\text{total}}_{\text{Si}}-N^{\text{3C-SiC}}_{\text{C}}\right)
+ \mu_{\text{Si}} \text{ ,}
+\label{eq:md:ife}
+\end{equation}
+with $E$ being the free energy of the precipitate configuration at zero temperature.
+An interfacial energy of 2267.28 eV is obtained.
+The amount of C atoms together with the observed lattice constant of the precipitate leads to a precipitate radius of 29.93 \AA.
+Thus, the interface tension, given by the energy of the interface devided by the surface area of the precipitate is $20.15\,\frac{\text{eV}}{\text{nm}^2}$ or $3.23\times 10^{-4}\,\frac{\text{J}}{\text{cm}^2}$.
+This is located inside the eperimentally estimated range of $2-8\times 10^{-4}\,\frac{\text{J}}{\text{cm}^2}$ \cite{taylor93}.
+