--- /dev/null
+%
+% bibliography database
+%
+
+% molecular dynamics: basics / potential
+
+@article{albe_sic_pot,
+ author = {Paul Erhart and Karsten Albe},
+ title = {Analytical potential for atomistic simulations of silicon, carbon,
+ and silicon carbide},
+ publisher = {APS},
+ year = {2005},
+ journal = {Phys. Rev. B},
+ volume = {71},
+ number = {3},
+ eid = {035211},
+ numpages = {14},
+ pages = {035211},
+ notes = {alble reparametrization, analytical bond oder potential (ABOP)},
+ keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
+ wide band gap semiconductors; elasticity; enthalpy;
+ point defects; crystallographic shear; atomic forces},
+ url = {http://link.aps.org/abstract/PRB/v71/e035211},
+ doi = {10.1103/PhysRevB.71.035211}
+}
+
+@Article{albe2002,
+ title = {Modeling the metal-semiconductor interaction:
+ Analytical bond-order potential for platinum-carbon},
+ author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
+ journal = {Phys. Rev. B},
+ volume = {65},
+ number = {19},
+ pages = {195124},
+ numpages = {11},
+ year = {2002},
+ month = {May},
+ doi = {10.1103/PhysRevB.65.195124},
+ publisher = {American Physical Society},
+ notes = {derivation of albe bond order formalism},
+}
+
+@Article{koster2002,
+ title = {Stress relaxation in $a-Si$ induced by ion bombardment},
+ author = {M. Koster, H. M. Urbassek},
+ journal = {Phys. Rev. B},
+ volume = {62},
+ number = {16},
+ pages = {11219--11224},
+ numpages = {5},
+ year = {2000},
+ month = {Oct},
+ doi = {10.1103/PhysRevB.62.11219},
+ publisher = {American Physical Society},
+ notes = {virial derivation for 3-body tersoff potential}
+}
+
+@Article{breadmore99,
+ title = {Direct simulation of ion-beam-induced stressing
+ and amorphization of silicon},
+ author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
+ journal = {Phys. Rev. B},
+ volume = {60},
+ number = {18},
+ pages = {12610--12616},
+ numpages = {6},
+ year = {1999},
+ month = {Nov},
+ doi = {10.1103/PhysRevB.60.12610},
+ publisher = {American Physical Society},
+ notes = {virial derivation for 3-body tersoff potential}
+}
+
+% molecular dynamics: applications
+
+@Article{batra87,
+ title = {Molecular-dynamics study of self-interstitials in silicon},
+ author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
+ journal = {Phys. Rev. B},
+ volume = {35},
+ number = {18},
+ pages = {9552--9558},
+ numpages = {6},
+ year = {1987},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.35.9552},
+ publisher = {American Physical Society},
+ notes = {selft-interstitials in silicon, stillinger-weber,
+ calculation of defect formation energy, defect interstitial types}
+}
+
+@Article{schober89,
+ title = {Extended interstitials in silicon and germanium},
+ author = {H. R. Schober},
+ journal = {Phys. Rev. B},
+ volume = {39},
+ number = {17},
+ pages = {13013--13015},
+ numpages = {2},
+ year = {1989},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.39.13013},
+ publisher = {American Physical Society},
+ notes = {stillinger-weber silicon 110 stable and metastable dumbbell
+ configuration}
+}
+
+% tight binding
+
+@Article{tang97,
+ title = {Intrinsic point defects in crystalline silicon:
+ Tight-binding molecular dynamics studiesof self-diffusion,
+ interstitial-vacancy recombination, and formation volumes},
+ author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
+ journal = {Phys. Rev. B},
+ volume = {55},
+ number = {21},
+ pages = {14279--14289},
+ numpages = {10},
+ year = {1997},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.55.14279},
+ publisher = {American Physical Society},
+ notes = {si self interstitial, diffusion, tbmd}
+}
+
+@Article{tang97,
+ title = {Tight-binding theory of native point defects in silicon},
+ author = {L. Colombo},
+ journal = {Annu. Rev. Mater. Res.},
+ volume = {32},
+ pages = {271--295},
+ numpages = {25},
+ year = {2002},
+ doi = {10.1146/annurev.matsci.32.111601.103036},
+ publisher = {Annual Reviews},
+ notes = {si self interstitial, tbmd, virial stress}
+}
+
+% mixed
+
+@Article{gao2001,
+ title = {Ab initio and empirical-potential studies of defect properties
+ in $3C-SiC$ },
+ author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
+ journal = {Phys. Rev. B},
+ volume = {64},
+ number = {24},
+ pages = {245208},
+ numpages = {7},
+ year = {2001},
+ month = {Dec},
+ doi = {10.1103/PhysRevB.64.245208},
+ publisher = {American Physical Society},
+ notes = {defects in 3c-sic}
+}
+
+% ab initio
+
+@Article{leung99,
+ title = {Calculations of Silicon Self-Interstitial Defects},
+ author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
+ Itoh, S. and Ihara, S. },
+ journal = {Phys. Rev. Lett.},
+ volume = {83},
+ number = {12},
+ pages = {2351--2354},
+ numpages = {3},
+ year = {1999},
+ month = {Sep},
+ doi = {10.1103/PhysRevLett.83.2351},
+ publisher = {American Physical Society},
+ notes = {nice images of the defects}
+}
+
+@Article{PhysRevB.50.7439,
+ title = {Identification of the migration path of interstitial carbon
+ in silicon},
+ author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
+ journal = {Phys. Rev. B},
+ volume = {50},
+ number = {11},
+ pages = {7439--7442},
+ numpages = {3},
+ year = {1994},
+ month = {Sep},
+ doi = {10.1103/PhysRevB.50.7439},
+ publisher = {American Physical Society},
+ notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
+}
+
+% experimental stuff
+
+@Article{watkins76,
+ title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
+ author = {Watkins, G. D. and Brower, K. L.},
+ journal = {Phys. Rev. Lett.},
+ volume = {36},
+ number = {22},
+ pages = {1329--1332},
+ numpages = {3},
+ year = {1976},
+ month = {May},
+ doi = {10.1103/PhysRevLett.36.1329},
+ publisher = {American Physical Society},
+ notes = {epr observations of 100 interstitial carbon atom in silicon}
+}
+
+@Article{PhysRevB.42.5759,
+ title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
+ author = {L. W. Song, G. D. Watkins},
+ journal = {Phys. Rev. B},
+ volume = {42},
+ number = {9},
+ pages = {5759--5764},
+ numpages = {5},
+ year = {1990},
+ month = {Sep},
+ doi = {10.1103/PhysRevB.42.5759},
+ publisher = {American Physical Society}
+}
+
+% my own publications
+
+@article{zirkelbach2007,
+ title = {Monte Carlo simulation study of a selforganisation process
+ leading to ordered precipitate structures},
+ author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
+ journal = {Nucl. instr. and Meth. B},
+ volume = {257},
+ number = {1--2},
+ pages = {75--79},
+ numpages = {5},
+ year = {2007},
+ month = {Apr},
+ doi = {doi:10.1016/j.nimb.2006.12.118},
+ publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
+}
+
+@article{zirkelbach2006,
+ title = {Monte-Carlo simulation study of the self-organization of nanometric
+ amorphous precipitates in regular arrays during ion irradiation},
+ author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
+ journal = {Nucl. instr. and Meth. B},
+ volume = {242},
+ number = {1--2},
+ pages = {679--682},
+ numpages = {4},
+ year = {2006},
+ month = {Jan},
+ doi = {doi:10.1016/j.nimb.2005.08.162},
+ publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
+}
+
+@article{zirkelbach2005,
+ title = {Modelling of a selforganization process leading to periodic arrays
+ of nanometric amorphous precipitates by ion irradiation},
+ author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
+ journal = {Comp. Mater. Sci.},
+ volume = {33},
+ number = {1--3},
+ pages = {310--316},
+ numpages = {7},
+ year = {2005},
+ month = {Apr},
+ doi = {doi:10.1016/j.commatsci.2004.12.016},
+ publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
+}
+
+++ /dev/null
-%
-% bibliography database
-%
-
-% molecular dynamics: basics / potential
-
-@article{albe_sic_pot,
- author = {Paul Erhart and Karsten Albe},
- title = {Analytical potential for atomistic simulations of silicon, carbon,
- and silicon carbide},
- publisher = {APS},
- year = {2005},
- journal = {Phys. Rev. B},
- volume = {71},
- number = {3},
- eid = {035211},
- numpages = {14},
- pages = {035211},
- notes = {alble reparametrization, analytical bond oder potential (ABOP)}
- keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
- wide band gap semiconductors; elasticity; enthalpy;
- point defects; crystallographic shear; atomic forces},
- url = {http://link.aps.org/abstract/PRB/v71/e035211},
- doi = {10.1103/PhysRevB.71.035211}
-}
-
-@Article{albe2002,
- title = {Modeling the metal-semiconductor interaction:
- Analytical bond-order potential for platinum-carbon},
- author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
- journal = {Phys. Rev. B},
- volume = {65},
- number = {19},
- pages = {195124},
- numpages = {11},
- year = {2002},
- month = {May},
- doi = {10.1103/PhysRevB.65.195124},
- publisher = {American Physical Society}
- notes = {derivation of albe bond order formalism}
-}
-
-@Article{koster2002,
- title = {Stress relaxation in $a-Si$ induced by ion bombardment},
- author = {M. Koster, H. M. Urbassek},
- journal = {Phys. Rev. B},
- volume = {62},
- number = {16},
- pages = {11219--11224},
- numpages = {5},
- year = {2000},
- month = {Oct},
- doi = {10.1103/PhysRevB.62.11219},
- publisher = {American Physical Society}
- notes = {virial derivation for 3-body tersoff potential}
-}
-
-@Article{breadmore99,
- title = {Direct simulation of ion-beam-induced stressing
- and amorphization of silicon},
- author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
- journal = {Phys. Rev. B},
- volume = {60},
- number = {18},
- pages = {12610--12616},
- numpages = {6},
- year = {1999},
- month = {Nov},
- doi = {10.1103/PhysRevB.60.12610},
- publisher = {American Physical Society}
- notes = {virial derivation for 3-body tersoff potential}
-}
-
-% molecular dynamics: applications
-
-@Article{batra87,
- title = {Molecular-dynamics study of self-interstitials in silicon},
- author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
- journal = {Phys. Rev. B},
- volume = {35},
- number = {18},
- pages = {9552--9558},
- numpages = {6},
- year = {1987},
- month = {Jun},
- doi = {10.1103/PhysRevB.35.9552},
- publisher = {American Physical Society}
- notes = {selft-interstitials in silicon, stillinger-weber,
- calculation of defect formation energy, defect interstitial types}
-}
-
-@Article{schober89,
- title = {Extended interstitials in silicon and germanium},
- author = {H. R. Schober},
- journal = {Phys. Rev. B},
- volume = {39},
- number = {17},
- pages = {13013--13015},
- numpages = {2},
- year = {1989},
- month = {Jun},
- doi = {10.1103/PhysRevB.39.13013},
- publisher = {American Physical Society}
- notes = {stillinger-weber silicon 110 stable and metastable dumbbell
- configuration}
-}
-
-% tight binding
-
-@Article{tang97,
- title = {Intrinsic point defects in crystalline silicon:
- Tight-binding molecular dynamics studiesof self-diffusion,
- interstitial-vacancy recombination, and formation volumes},
- author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
- journal = {Phys. Rev. B},
- volume = {55},
- number = {21},
- pages = {14279--14289},
- numpages = {10},
- year = {1997},
- month = {Jun},
- doi = {10.1103/PhysRevB.55.14279},
- publisher = {American Physical Society}
- notes = {si self interstitial, diffusion, tbmd}
-}
-
-@Article{tang97,
- title = {Tight-binding theory of native point defects in silicon}
- author = {L. Colombo},
- journal = {Annu. Rev. Mater. Res.},
- volume = {32},
- pages = {271--295},
- numpages = {25},
- year = {2002},
- doi = {10.1146/annurev.matsci.32.111601.103036},
- publisher = {Annual Reviews}
- notes = {si self interstitial, tbmd, virial stress}
-}
-
-% mixed
-
-@Article{gao2001,
- title = {Ab initio and empirical-potential studies of defect properties
- in $3C-SiC$ },
- author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
- journal = {Phys. Rev. B},
- volume = {64},
- number = {24},
- pages = {245208},
- numpages = {7},
- year = {2001},
- month = {Dec},
- doi = {10.1103/PhysRevB.64.245208},
- publisher = {American Physical Society}
- notes = {defects in 3c-sic}
-}
-
-% ab initio
-
-@Article{leung99,
- title = {Calculations of Silicon Self-Interstitial Defects},
- author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
- Itoh, S. and Ihara, S. },
- journal = {Phys. Rev. Lett.},
- volume = {83},
- number = {12},
- pages = {2351--2354},
- numpages = {3},
- year = {1999},
- month = {Sep},
- doi = {10.1103/PhysRevLett.83.2351},
- publisher = {American Physical Society}
- notes = {nice images of the defects}
-}
-
-@Article{PhysRevB.50.7439,
- title = {Identification of the migration path of interstitial carbon
- in silicon},
- author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
- journal = {Phys. Rev. B},
- volume = {50},
- number = {11},
- pages = {7439--7442},
- numpages = {3},
- year = {1994},
- month = {Sep},
- doi = {10.1103/PhysRevB.50.7439},
- publisher = {American Physical Society}
- notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
-}
-
-% experimental stuff
-
-@Article{watkins76,
- title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {Watkins, G. D. and Brower, K. L.},
- journal = {Phys. Rev. Lett.},
- volume = {36},
- number = {22},
- pages = {1329--1332},
- numpages = {3},
- year = {1976},
- month = {May},
- doi = {10.1103/PhysRevLett.36.1329},
- publisher = {American Physical Society}
- notes = {epr observations of 100 interstitial carbon atom in silicon}
-}
-
-@Article{PhysRevB.42.5759,
- title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
- author = {L. W. Song, G. D. Watkins},
- journal = {Phys. Rev. B},
- volume = {42},
- number = {9},
- pages = {5759--5764},
- numpages = {5},
- year = {1990},
- month = {Sep},
- doi = {10.1103/PhysRevB.42.5759},
- publisher = {American Physical Society}
-}
-
-% my own publications
-
-@article{zirkelbach2007,
- title = {Monte Carlo simulation study of a selforganisation process
- leading to ordered precipitate structures},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
- volume = {257},
- number = {1--2},
- pages = {75--79},
- numpages = {5},
- year = {2007},
- month = {Apr},
- doi = {doi:10.1016/j.nimb.2006.12.118},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2006,
- title = {Monte-Carlo simulation study of the self-organization of nanometric
- amorphous precipitates in regular arrays during ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
- volume = {242},
- number = {1--2},
- pages = {679--682},
- numpages = {4},
- year = {2006},
- month = {Jan},
- doi = {doi:10.1016/j.nimb.2005.08.162},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2005,
- title = {Modelling of a selforganization process leading to periodic arrays
- of nanometric amorphous precipitates by ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Comp. Mater. Sci.},
- volume = {33},
- number = {1--3},
- pages = {310--316},
- numpages = {7},
- year = {2005},
- month = {Apr},
- doi = {doi:10.1016/j.commatsci.2004.12.016},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-