c_i - c_s stuff

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index b863fc97400f2a0bb83b411b73c7647e780247d9..54d50872a59cc6e442f6f295932d642006cc0747 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -47,7 +47,7 @@ However, the process of the formation of SiC precipitates in Si during C implant
 Based on experimental studies\cite{werner96,werner97,eichhorn99,lindner99_2,koegler03} it is assumed that incorporated C atoms form C-Si dimers (dumbbells) on regular Si lattice sites.\r
 The highly mobile C interstitials agglomerate into large clusters followed by the formation of incoherent 3C-SiC nanocrystallites once a critical size of the cluster is reached.\r
 In contrast, investigations of the precipitation in strained Si$_{1-y}$C$_y$/Si heterostructures formed by molecular beam epitaxy (MBE)\cite{strane94,guedj98} suggest an initial coherent clustering of substitutional instead of interstitial C followed by a loss of coherency once the increasing strain energy surpasses the interfacial energy of an incoherent 3C-SiC precipitate in c-Si.\r
-These two different mechanisms of precipitation might be determined by the respective method of fabrication.\r
+These two different mechanisms of precipitation might be attributed to the respective method of fabrication.\r
 However, in another IBS study Nejim et al. propose a topotactic transformation remaining structure and orientation likewise based on the formation of substitutional C and a concurrent reaction of the excess Si self-interstitials with further implanted C atoms in the initial state\cite{nejim95}.\r
 Solving this controversy and understanding the effective underlying processes will enable significant technological progress in 3C-SiC thin film formation driving the superior polytype for potential applications in high-performance electronic device production\cite{wesch96}.\r
 \r
@@ -217,7 +217,7 @@ Low barriers do only exist from energetically less favorable configurations, e.g
 Starting from this configuration, an activation energy of only \unit[1.2]{eV} is necessary for the transition into the ground state configuration.\r
 The corresponding migration energies and atomic configurations are displayed in Fig.~\ref{fig:036-239}.\r
 \begin{figure}\r
-\includegraphics[width=\columnwidth]{036-239.eps}\r
+\includegraphics[width=\columnwidth]{036-239.ps}\r
 \caption{Migration barrier and structures of the transition of a C$_{\text{i}}$ \hkl[-1 0 0] DB at position 2 (left) into a C$_{\text{i}}$ \hkl[0 -1 0] DB at position 1 (right). An activation energy of \unit[1.2]{eV} is observed.}\r
 \label{fig:036-239}\r
 \end{figure}\r
@@ -242,7 +242,7 @@ Secondly, a migration path with a barrier as low as \unit[?.?]{eV} exists starti
 The migration barrier and correpsonding structures are shown in Fig.~\ref{fig:188-225}.\r
 % 188 - 225 transition in progress\r
 \begin{figure}\r
-\includegraphics[width=\columnwidth]{188-225.eps}\r
+\includegraphics[width=\columnwidth]{188-225.ps}\r
 \caption{Migration barrier and structures of the transition of a C$_{\text{i}}$ \hkl[0 -1 0] DB at position 5 (left) into a C$_{\text{i}}$ \hkl[1 0 0] DB at position 1 (right). An activation energy of \unit[?.?]{eV} is observed.}\r
 \label{fig:188-225}\r
 \end{figure}\r
@@ -309,6 +309,11 @@ Present results show a difference in energy of states A and B, which exactly mat
 %Figure~\ref{fig:AB} displays the two configurations and migration barrier for the transition among the two states.\r
 \r
 % a b\r
+\begin{figure}\r
+\includegraphics[width=\columnwidth]{026-128.ps}\r
+\caption{Migration barrier and structures of the transition of the initial C$_{\text{i}}$ \hkl[0 0 -1] DB and C$_{\text{s}}$ at position 1 (left) into a C-C \hkl[1 0 0] DB occupying the lattice site at position 1 (right). An activation energy of \unit[0.1]{eV} is observed.}\r
+\label{fig:026-128}\r
+\end{figure}\r
 Configuration a is similar to configuration A except that the C$_{\text{s}}$ at position 1 is facing the C DB atom as a next neighbor resulting in the formation of a strong C-C bond and a much more noticeable perturbation of the DB structure.\r
 Nevertheless, the C and Si DB atoms remain threefold coordinated.\r
 Although the C-C bond exhibiting a distance of \unit[0.15]{nm} close to the distance expected in diamond or graphite should lead to a huge gain in energy, a repulsive interaction with a binding energy of \unit[0.26]{eV} is observed due to compressive strain of the Si DB atom and its top neighbors (\unit[0.230]{nm}/\unit[0.236]{nm}) along with additional tensile strain of the C$_{\text{s}}$ and its three neighboring Si atoms (\unit[0.198-0.209]{nm}/\unit[0.189]{nm}).\r
@@ -322,7 +327,7 @@ Spin polarization for C-C Int resulting spin up electrons located as in the case
 % mattoni: A favored by 0.2 eV - NO! (again, missing spin polarization?)\r
 \r
 % mig a-b\r
-% 2 more migs: 051 -> 128 and 026! forgot why ...\r
+% 2 more migs: 051 -> 128 and 026! forgot why ... probably it's about probability of C clustering\r
 \r
 \subsection{C$_{\text{i}}$ next to V}\r
 \r