c in si, strained si

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index a17cd642c451d0cd72bebbeb19a02023369465d1..bd00b0f12f1f003c251ca2d8fcb8e2afb7af7cdb 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1078,3 +1078,160 @@
   author =       "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
                  and J. M. Poate",
 }
+
+@Article{powell94,
+  author =       "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+  collaboration = "",
+  title =        "Formation of beta-Si{C} nanocrystals by the relaxation
+                 of Si[sub 1 - y]{C}[sub y] random alloy layers",
+  publisher =    "AIP",
+  year =         "1994",
+  journal =      "Applied Physics Letters",
+  volume =       "64",
+  number =       "3",
+  pages =        "324--326",
+  keywords =     "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+                 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+                 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+                 SYNTHESIS",
+  URL =          "http://link.aip.org/link/?APL/64/324/1",
+  doi =          "10.1063/1.111195",
+  notes =        "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+  author =       "Richard A. Soref",
+  collaboration = "",
+  title =        "Optical band gap of the ternary semiconductor Si[sub 1
+                 - x - y]Ge[sub x]{C}[sub y]",
+  publisher =    "AIP",
+  year =         "1991",
+  journal =      "Journal of Applied Physics",
+  volume =       "70",
+  number =       "4",
+  pages =        "2470--2472",
+  keywords =     "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+                 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+                 TERNARY ALLOYS",
+  URL =          "http://link.aip.org/link/?JAP/70/2470/1",
+  doi =          "10.1063/1.349403",
+  notes =        "band gap of strained si by c",
+}
+
+@Article{kasper91,
+  author =       "E Kasper",
+  title =        "Superlattices of group {IV} elements, a new
+                 possibility to produce direct band gap material",
+  journal =      "Physica Scripta",
+  volume =       "T35",
+  pages =        "232--236",
+  URL =          "http://stacks.iop.org/1402-4896/T35/232",
+  year =         "1991",
+  notes =        "superlattices, convert indirect band gap into a
+                 quasi-direct one",
+}
+
+@Article{osten99,
+  author =       "H. J. Osten and J. Griesche and S. Scalese",
+  collaboration = "",
+  title =        "Substitutional carbon incorporation in epitaxial
+                 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+                 molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1999",
+  journal =      "Applied Physics Letters",
+  volume =       "74",
+  number =       "6",
+  pages =        "836--838",
+  keywords =     "molecular beam epitaxial growth; semiconductor growth;
+                 wide band gap semiconductors; interstitials; silicon
+                 compounds",
+  URL =          "http://link.aip.org/link/?APL/74/836/1",
+  doi =          "10.1063/1.123384",
+  notes =        "substitutional c in si",
+}
+
+@Article{hohenberg64,
+  title =        "Inhomogeneous Electron Gas",
+  author =       "P. Hohenberg and W. Kohn",
+  journal =      "Phys. Rev.",
+  volume =       "136",
+  number =       "3B",
+  pages =        "B864--B871",
+  numpages =     "7",
+  year =         "1964",
+  month =        nov,
+  doi =          "10.1103/PhysRev.136.B864",
+  publisher =    "American Physical Society",
+  notes =        "density functional theory, dft",
+}
+
+@Article{kohn65,
+  title =        "Self-Consistent Equations Including Exchange and
+                 Correlation Effects",
+  author =       "W. Kohn and L. J. Sham",
+  journal =      "Phys. Rev.",
+  volume =       "140",
+  number =       "4A",
+  pages =        "A1133--A1138",
+  numpages =     "5",
+  year =         "1965",
+  month =        nov,
+  doi =          "10.1103/PhysRev.140.A1133",
+  publisher =    "American Physical Society",
+  notes =        "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+  title =        "Strain-stabilized highly concentrated pseudomorphic
+                 $Si1-x$$Cx$ layers in Si",
+  author =       "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+                 J. Osten",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "72",
+  number =       "22",
+  pages =        "3578--3581",
+  numpages =     "3",
+  year =         "1994",
+  month =        may,
+  doi =          "10.1103/PhysRevLett.72.3578",
+  publisher =    "American Physical Society",
+  notes =        "high c concentration in si, heterostructure, starined
+                 si, dft",
+}
+
+@Article{chang05,
+  title =        "Electron Transport Model for Strained Silicon-Carbon
+                 Alloy",
+  author =       "Shu-Tong Chang and Chung-Yi Lin",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "44",
+  number =       "4B",
+  pages =        "2257--2262",
+  numpages =     "5",
+  year =         "2005",
+  URL =          "http://jjap.ipap.jp/link?JJAP/44/2257/",
+  doi =          "10.1143/JJAP.44.2257",
+  publisher =    "The Japan Society of Applied Physics",
+  notes =        "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+  author =       "H. J. Osten and P. Gaworzewski",
+  collaboration = "",
+  title =        "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+                 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+                 Si(001)",
+  publisher =    "AIP",
+  year =         "1997",
+  journal =      "Journal of Applied Physics",
+  volume =       "82",
+  number =       "10",
+  pages =        "4977--4981",
+  keywords =     "silicon compounds; Ge-Si alloys; wide band gap
+                 semiconductors; semiconductor epitaxial layers; carrier
+                 density; Hall mobility; interstitials; defect states",
+  URL =          "http://link.aip.org/link/?JAP/82/4977/1",
+  doi =          "10.1063/1.366364",
+  notes =        "charge transport in strained si",
+}