% bibliography database
%
-% molecular dynamics:
-
-@Article{batra87,
- title = {Molecular-dynamics study of self-interstitials in silicon},
- author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
- journal = {Phys. Rev. B},
- volume = {35},
- number = {18},
- pages = {9552--9558},
- numpages = {6},
- year = {1987},
- month = {Jun},
- doi = {10.1103/PhysRevB.35.9552},
- publisher = {American Physical Society}
- notes = {selft-interstitials in silicon, stillinger-weber,
- calculation of defect formation energy, defect interstitial types}
-}
+% molecular dynamics: basics / potential
@article{albe_sic_pot,
author = {Paul Erhart and Karsten Albe},
notes = {derivation of albe bond order formalism}
}
+@Article{koster2002,
+ title = {Stress relaxation in $a-Si$ induced by ion bombardment},
+ author = {M. Koster, H. M. Urbassek},
+ journal = {Phys. Rev. B},
+ volume = {62},
+ number = {16},
+ pages = {11219--11224},
+ numpages = {5},
+ year = {2000},
+ month = {Oct},
+ doi = {10.1103/PhysRevB.62.11219},
+ publisher = {American Physical Society}
+ notes = {virial derivation for 3-body tersoff potential}
+}
+
+@Article{breadmore99,
+ title = {Direct simulation of ion-beam-induced stressing
+ and amorphization of silicon},
+ author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
+ journal = {Phys. Rev. B},
+ volume = {60},
+ number = {18},
+ pages = {12610--12616},
+ numpages = {6},
+ year = {1999},
+ month = {Nov},
+ doi = {10.1103/PhysRevB.60.12610},
+ publisher = {American Physical Society}
+ notes = {virial derivation for 3-body tersoff potential}
+}
+
+% molecular dynamics: applications
+
+@Article{batra87,
+ title = {Molecular-dynamics study of self-interstitials in silicon},
+ author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
+ journal = {Phys. Rev. B},
+ volume = {35},
+ number = {18},
+ pages = {9552--9558},
+ numpages = {6},
+ year = {1987},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.35.9552},
+ publisher = {American Physical Society}
+ notes = {selft-interstitials in silicon, stillinger-weber,
+ calculation of defect formation energy, defect interstitial types}
+}
+
+@Article{schober89,
+ title = {Extended interstitials in silicon and germanium},
+ author = {H. R. Schober},
+ journal = {Phys. Rev. B},
+ volume = {39},
+ number = {17},
+ pages = {13013--13015},
+ numpages = {2},
+ year = {1989},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.39.13013},
+ publisher = {American Physical Society}
+ notes = {stillinger-weber silicon 110 stable and metastable dumbbell
+ configuration}
+}
+
+% tight binding
+
+@Article{tang97,
+ title = {Intrinsic point defects in crystalline silicon:
+ Tight-binding molecular dynamics studiesof self-diffusion,
+ interstitial-vacancy recombination, and formation volumes},
+ author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
+ journal = {Phys. Rev. B},
+ volume = {55},
+ number = {21},
+ pages = {14279--14289},
+ numpages = {10},
+ year = {1997},
+ month = {Jun},
+ doi = {10.1103/PhysRevB.55.14279},
+ publisher = {American Physical Society}
+ notes = {si self interstitial, diffusion, tbmd}
+}
+
+@Article{tang97,
+ title = {Tight-binding theory of native point defects in silicon}
+ author = {L. Colombo},
+ journal = {Annu. Rev. Mater. Res.},
+ volume = {32},
+ pages = {271--295},
+ numpages = {25},
+ year = {2002},
+ doi = {10.1146/annurev.matsci.32.111601.103036},
+ publisher = {Annual Reviews}
+ notes = {si self interstitial, tbmd, virial stress}
+}
+
+% mixed
+
+@Article{gao2001,
+ title = {Ab initio and empirical-potential studies of defect properties
+ in $3C-SiC$ },
+ author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
+ journal = {Phys. Rev. B},
+ volume = {64},
+ number = {24},
+ pages = {245208},
+ numpages = {7},
+ year = {2001},
+ month = {Dec},
+ doi = {10.1103/PhysRevB.64.245208},
+ publisher = {American Physical Society}
+ notes = {defects in 3c-sic}
+}
+
% ab initio
@Article{leung99,