sync aux<->pb

diff --git a/posic/thesis/const_sic.tex b/posic/thesis/const_sic.tex
index 65373c79d644d689242629107be9173176f61fa5..20bb79178cad93f64009c3308c79e95fa3af8ea9 100644 (file)
--- a/posic/thesis/const_sic.tex
+++ b/posic/thesis/const_sic.tex
@@ -1,6 +1,7 @@
 \chapter{Investigation of self-constructed 3C-SiC precipitates}
 
 \section{3C-SiC precipitate in crystalline silicon}
+\label{section:const_sic:prec}
 
 A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
 On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 774d5df283ea31ca03baba2a6e2da883092d6f3d..4435c969b552fe668e2276504ff4ddd9602047a6 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1321,6 +1321,8 @@ In the same way the energetically most unfavorable configuration can be explaine
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 
+{\color{red}Todo: Erhart/Albe calc for most and less favorable configuration!}
+
 {\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}
 
 \section{Migration in systems of combined defects}

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index a6756d3e235a5d84579e52ea3745b731451d026d..f2f8eab2a5d136c8b47c3d4cab3c7cd586b74f3a 100644 (file)
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -495,7 +495,7 @@ Since longer time scales are not sufficient \ldots
 {\color{red}Todo: other approaches?}
 
 {\color{red}Todo: ART MD?\\
-How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from his configuration?
+How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from this configuration?
 }
 
 \section{Conclusions concerning the SiC conversion mechanism}