now starting simulation intro

diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex
index 68ae4d36936fcca39865e3f7bde2f4cd99bae46e..dc1e0418ad7419fa3f183d42e2b15540380f8e62 100644 (file)
--- a/posic/thesis/intro.tex
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@@ -17,18 +17,13 @@ High resolution transmisson electron microscopy (HRTEM) studies indicate the for
 These C-Si dumbbells agglomerate and once a critical radius is reached, the topotactic transformation into a SiC precipitate occurs \cite{werner97,lindner01}.
 
 A better understanding of the supposed SiC conversion mechanism and related carbon-mediated effects in silicon will enable significant technological progress in SiC thin film formation on the one hand and likewise offer perspectives for processes which rely upon prevention of precipitation events for improved silicon based devices on the other hand.
-Implanted carbon is known to suppress transient enhanced diffusion (TED) of dopant species like boron or phosphorus in the annealing step \cite{cowner96} which can be exploited to create shallow p-n junctions in submicron technologies.
+Implanted carbon is known to suppress transient enhanced diffusion (TED) of dopant species like boron or phosphorus in the annealing step \cite{cowern96} which can be exploited to create shallow p-n junctions in submicron technologies.
 Si self-interstitials (Si$_{\text{i}}$), known as the transport vehicles for dopants \cite{fahey89,stolk95}, get trapped by reacting with the carbon atoms.
-Furthermore carbon insertion can be used to taylor the electronic properties of ...
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-Strained silicon to achieve higher charge carrier velocities ...
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-Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
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+Furthermore, carbon incorporated in silicon is being used to adjust the band gap \cite{soref91,kasper91} and the fabrication of strained silicon \cite{strane94,strane96,osten99} in order to obtain higher charge carrier mobilities \cite{chang05,osten97}.
 
+Thus, the understanding of carbon in silicon either as isovalent impurity as well as at concentrations exceeding the solid solubility limit up to the stoichiometric ratio to form silicon carbide is of fundamental interest.
+Atomistic simulations offer 
+In particular the last step of the SiC conversion, which cannot 
 
 Computer simulations ...
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