--- /dev/null
+\pdfoutput=0
+\documentclass[landscape,semhelv]{seminar}
+
+\usepackage{verbatim}
+\usepackage[german]{babel}
+\usepackage[latin1]{inputenc}
+\usepackage[T1]{fontenc}
+\usepackage{amsmath}
+\usepackage{ae}
+
+\usepackage{calc} % Simple computations with LaTeX variables
+\usepackage{caption} % Improved captions
+\usepackage{fancybox} % To have several backgrounds
+
+\usepackage{fancyhdr} % Headers and footers definitions
+\usepackage{fancyvrb} % Fancy verbatim environments
+\usepackage{pstricks} % PSTricks with the standard color package
+
+\usepackage{graphicx}
+\graphicspath{{../img/}}
+
+\usepackage{semcolor}
+\usepackage{semlayer} % Seminar overlays
+\usepackage{slidesec} % Seminar sections and list of slides
+
+\input{seminar.bug} % Official bugs corrections
+\input{seminar.bg2} % Unofficial bugs corrections
+
+\articlemag{1}
+
+\begin{document}
+
+\extraslideheight{10in}
+\slideframe{plain}
+
+% specify width and height
+\slidewidth 27.7cm
+\slideheight 19.1cm
+
+% shift it into visual area properly
+\def\slideleftmargin{3.3cm}
+\def\slidetopmargin{0.0cm}
+
+\newcommand{\ham}{\mathcal{H}}
+\newcommand{\pot}{\mathcal{V}}
+\newcommand{\foo}{\mathcal{U}}
+\newcommand{\vir}{\mathcal{W}}
+
+% topic
+
+\begin{slide}
+\begin{center}
+
+ \vspace{16pt}
+
+ {\LARGE\bf
+ Molecular dynamics simulation study\\
+ of the silicon carbide precipitation process
+ }
+
+ \vspace{24pt}
+
+ \textsc{\small \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
+ K. Nordlund$^2$, B. Stritzker$^1$}\\
+
+ \vspace{32pt}
+
+ \begin{minipage}{2.0cm}
+ \begin{center}
+ \includegraphics[height=1.6cm]{uni-logo.eps}
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{8.0cm}
+ \begin{center}
+ {\footnotesize
+ $^1$ Experimentalphysik IV, Institut f"ur Physik,\\
+ Universit"at Augsburg, Universit"atsstr. 1,\\
+ D-86135 Augsburg, Germany
+ }
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{2.3cm}
+ \begin{center}
+ \includegraphics[height=1.5cm]{Lehrstuhl-Logo.eps}
+ \end{center}
+ \end{minipage}
+
+ \vspace{16pt}
+
+ \begin{minipage}{4.0cm}
+ \begin{center}
+ \includegraphics[height=1.6cm]{logo_eng.eps}
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{8.0cm}
+ \begin{center}
+ {\footnotesize
+ $^2$ Accelerator Laboratory, Department of Physical Sciences,\\
+ University of Helsinki, Pietari Kalmink. 2,\\
+ 00014 Helsinki, Finland
+ }
+ \end{center}
+ \end{minipage}
+\end{center}
+\end{slide}
+
+% contents
+
+\begin{slide}
+
+ \begin{center}
+ {\bf
+ Molecular dynamics simulation study\\
+ of the silicon carbide precipitation process
+ }
+ \end{center}
+
+ \vspace{16pt}
+
+ {\large\bf
+ Outline
+ }
+
+ \vspace{16pt}
+
+ \begin{itemize}
+ \item Motivation / Introduction
+ \item Molecular dynamics simulation details
+ \begin{itemize}
+ \item Integrator, potential, ensemble control
+ \item Simulation sequence
+ \end{itemize}
+ \item Results gained by simulation
+ \begin{itemize}
+ \item Carbon interstitials in silicon
+ \item Existence of $SiC$-precipitates
+ \end{itemize}
+ \item Conclusion / Outlook
+ \end{itemize}
+\end{slide}
+
+% start of contents
+
+\end{document}
+