finished until outline slide

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index 9931ba16bb1a0f2d05c7b3f9147e1c6a6b0ec785..2c9d67f5198a6ab4bedef0e963d7091b665ffd09 100644 (file)
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -143,6 +143,9 @@ E\\
 \end{center}
 \end{slide}
 
+% no vertical centering
+\centerslidesfalse
+
 \ifnum1=0
 
 % intro
@@ -296,7 +299,6 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
-\fi
 % fabrication
 
 \begin{slide}
@@ -317,7 +319,7 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \vspace{2pt}
 
-SiC thin film by MBE \& CVD
+SiC thin films by MBE \& CVD
 \begin{itemize}
  \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
  \item \underline{Commercially available} semiconductor power devices based on
@@ -330,33 +332,33 @@ SiC thin film by MBE \& CVD
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
 
-\vspace{-0.4cm}
+\vspace{-0.2cm}
 
 Alternative approach:
 Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
+\vspace{0.2cm}
+
 \scriptsize
 
-\begin{minipage}{6.5cm}
- \begin{itemize}
-  \item \underline{Implantation step 1}\\
-        180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\[0.1cm]
-        Box-like distribution of equally sized \&\\
-        epitaxially oriented SiC precipitates
-                       
-  \item \underline{Implantation step 2}\\
-        180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\[0.1cm]
-        Destruction of SiC nanocrystals\\
-        in growing amorphous interface layers
-  \item \underline{Annealing}\\
-        $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\[0.1cm]
-        Homogeneous, stoichiometric SiC layer\\
-        with sharp interfaces
- \end{itemize}
+\framebox{
+\begin{minipage}{3.15cm}
+ \begin{center}
+\includegraphics[width=3cm]{imp.eps}\\
+ {\tiny
+  Carbon implantation
+ }
+ \end{center}
 \end{minipage}
-\begin{minipage}{0.3cm}
-\hfill
+\begin{minipage}{3.15cm}
+ \begin{center}
+\includegraphics[width=3cm]{annealing.eps}\\
+ {\tiny
+  \unit[12]{h} annealing at \degc{1200}
+ }
+ \end{center}
 \end{minipage}
+}
 \begin{minipage}{5.5cm}
  \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
  \begin{center}
@@ -366,26 +368,25 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
  \end{center}
 \end{minipage}
 
-\framebox{
- \begin{minipage}{6.3cm}
- \begin{center}
- {\color{blue}
-  Precipitation mechanism not yet fully understood!
- }
- \renewcommand\labelitemi{$\Rightarrow$}
- \small
- \underline{Understanding the SiC precipitation}
- \begin{itemize}
-  \item significant technological progress in SiC thin film formation
-  \item perspectives for processes relying upon prevention of SiC precipitation
- \end{itemize}
- \end{center}
- \end{minipage}
+\end{slide}
+
+% contents
+
+\begin{slide}
+
+{\large\bf
+ Systematic investigation of C implantations into Si
 }
 
+\vspace{1.7cm}
+\begin{center}
+\hspace{-1.0cm}
+\includegraphics[width=0.75\textwidth]{imp_inv.eps}
+\end{center}
+
 \end{slide}
 
-% contents
+% outline
 
 \begin{slide}
 
@@ -393,24 +394,51 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
  Outline
 }
 
- \begin{itemize}
-  \item Implantation of C in Si --- Overview of experimental observations
-  \item Utilized simulation techniques and modeled problems
-        \begin{itemize}
-         \item {\color{blue}Diploma thesis}\\
-               \underline{Monte Carlo} simulations
-               modeling the selforganization process
-               leading to periodic arrays of nanometric amorphous SiC
-               precipitates
-         \item {\color{blue}Doctoral studies}\\
-               Classical potential \underline{molecular dynamics} simulations
-               \ldots\\
-               \underline{Density functional theory} calculations
-               \ldots\\[0.2cm]
-               \ldots on defects and SiC precipitation in Si
-        \end{itemize}
-  \item Summary / Conclusion / Outlook
- \end{itemize}
+\vspace{1.7cm}
+\begin{center}
+\hspace{-1.0cm}
+\includegraphics[width=0.75\textwidth]{imp_inv.eps}
+\end{center}
+
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\begin{minipage}{11cm}
+{\color{red}Diploma thesis}\\
+ \underline{Monte Carlo} simulation modeling the selforganization process\\
+ leading to periodic arrays of nanometric amorphous SiC precipitates
+\end{minipage}
+}}}
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\begin{minipage}{11cm}
+{\color{blue}Doctoral studies}\\
+ Classical potential \underline{molecular dynamics} simulations \ldots\\
+ \underline{Density functional theory} calculations \ldots\\[0.2cm]
+ \ldots on defect formation and SiC precipitation in Si
+\end{minipage}
+}}}
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=red,linewidth=0.05cm](5,3.0)(0.8,1.0)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=blue,linewidth=0.05cm](8.2,3.2)(1.5,1.6)
+\end{pspicture}
+
+\end{slide}
+
+% continue here
+\fi
+\begin{slide}
+
+{\large\bf
+ Selforganization of nanometric amorphous SiC lamellae
+}
+
+\begin{minipage}{6cm}
+\includegraphics[width=6cm]{}
+\end{minipage}
 
 \end{slide}
 
@@ -418,6 +446,30 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{document}
 \ifnum1=0
 
+\begin{slide}
+
+{\large\bf
+ Selforganization of nanometric amorphous SiC lamellae
+}
+
+\framebox{
+ \begin{minipage}{6.3cm}
+ \begin{center}
+ {\color{blue}
+  Precipitation mechanism not yet fully understood!
+ }
+ \renewcommand\labelitemi{$\Rightarrow$}
+ \small
+ \underline{Understanding the SiC precipitation}
+ \begin{itemize}
+  \item significant technological progress in SiC thin film formation
+  \item perspectives for processes relying upon prevention of SiC precipitation
+ \end{itemize}
+ \end{center}
+ \end{minipage}
+}
+
+\end{slide}
 
 \begin{slide}