more on sic

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 73c0e25e27c17b57729edfb7851b6540e87a9b6d..fb7fc467f02ca293e9f4803048ca35a86eee7b21 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -268,9 +268,11 @@ In another study~\cite{serre95} high dose C implantations were performed at room
 Implantations at room temperature lead to the formation of a buried amorphous carbide layer in addition to a thin C-rich film at the surface, which is attributed to the migration of C atoms towards the surface.
 In contrast, implantations at elevated temperatures result in the exclusive formation of a buried layer consisting of 3C-SiC precipitates epitaxially aligned to the Si host, which obviously is more favorable than the C migration towards the surface.
 Annealing at temperatures up to \unit[1150]{$^{\circ}$C} does not alter the C profile.
-Instead defect annihilation is observed and the C-rich surface layer of the room temperature implant turns into a layer consisting of SiC precipitates, which, however, are not aligned with the Si matrix indicating a mechanism different to the one of the direct formation for the high-temperature implantation.
+Instead, defect annihilation is observed and the C-rich surface layer of the room temperature implant turns into a layer consisting of SiC precipitates, which, however, are not aligned with the Si matrix indicating a mechanism different to the one of the direct formation for the high-temperature implantation.
 
-Based on these findings and extensive TEM investigations, a recipe was developed to form buried layers of single-crystalline SiC featuring an improved interface and crystallinity~\cite{lindner99,lindner01,lindner02}.
+Based on these findings%
+% and extensive TEM investigations
+, a recipe was developed to form buried layers of single-crystalline SiC featuring an improved interface and crystallinity~\cite{lindner99,lindner01,lindner02}.
 Therefore, the dose must not exceed the stoichiometry dose, i.e.\ the dose corresponding to \unit[50]{at.\%} C concentration at the implantation peak.
 Otherwise clusters of C are formed, which cannot be dissolved during post-implantation annealing at moderate temperatures below the Si melting point~\cite{lindner96,calcagno96}.
 Annealing should be performed for \unit[5--10]{h} at \unit[1250]{$^{\circ}$C} to enable the redistribution from the as-implanted Gaussian into a box-like C depth profile~\cite{lindner95}.