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diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex
index 13ccf5d4ba61f40ede4172791af06ea603c7c3d5..3f0eed858176277c35e8901a72e8cff2f7d7a1b6 100644 (file)
--- a/posic/thesis/intro.tex
+++ b/posic/thesis/intro.tex
@@ -7,7 +7,7 @@ Its radiation hardness allows the operation as a first wall material in nuclear
 
 
 The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality.
-Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
+Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough.
 
 New means: Ion beam synthesis (IBS) of burried SiC layers ...
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