some more bib entries

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 9488c83b192f51cb9a1971a57ba61e25fd8abec8..4588c0843ccb0c9cb7dc60693ef9412eea3d8256 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -129,6 +129,23 @@
            configuration}
 }
 
+@Article{gao02,
+  title = {Cascade overlap and amorphization in $3C-SiC:$
+           Defect accumulation, topological features, and disordering},
+  author = {Gao, F.  and Weber, W. J.},
+  journal = {Phys. Rev. B},
+  volume = {66},
+  number = {2},
+  pages = {024106},
+  numpages = {10},
+  year = {2002},
+  month = {Jul},
+  doi = {10.1103/PhysRevB.66.024106},
+  publisher = {American Physical Society},
+  note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
+          pair correlation of amorphous sic, md result analyze}
+}
+
 % tight binding
 
 @Article{tang97,
@@ -213,7 +230,7 @@
   notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
 }
 
-% experimental stuff
+% experimental stuff - interstitials
 
 @Article{watkins76,
   title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
@@ -230,7 +247,7 @@
   notes = {epr observations of 100 interstitial carbon atom in silicon}
 }
 
-@Article{PhysRevB.42.5759,
+@Article{song90,
   title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
   author = {L. W. Song, G. D. Watkins},
   journal = {Phys. Rev. B},
@@ -244,13 +261,43 @@
   publisher = {American Physical Society}
 }
 
+% experimental stuff - strained silicon
+
+@Article{strane96,
+  title = {Carbon incorporation into Si at high concentrations
+           by ion implantation and solid phase epitaxy},
+  author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
+            J.K. Watanabe, J. W. Mayer},
+  journal = {J. Appl. Phys.},
+  volume = {79},
+  pages = {637},
+  year = {1996},
+  month = {January},
+  doi = {10.1063/1.360806},
+  notes = {strained silicon, carbon supersaturation}
+}
+
+% properties sic
+
+@Article{edgar92,
+  title = {Prospects for device implementation of wide band gap semiconductors},
+  author = {J. H. Edgar},
+  journal = {J. Matter. Res.},
+  volume = {7},
+  pages = {235},
+  year = {1992},
+  month = {January},
+  doi = {10.1557/JMR.1992.0235},
+  notes = {properties wide band gap semiconductor, sic polytypes}
+}
+
 % my own publications
 
 @article{zirkelbach2007,
   title = {Monte Carlo simulation study of a selforganisation process
            leading to ordered precipitate structures},
   author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
-  journal = {Nucl. instr. and Meth. B},
+  journal = {Nucl. Instr. and Meth. B},
   volume = {257},
   number = {1--2},
   pages = {75--79},
@@ -265,7 +312,7 @@
   title = {Monte-Carlo simulation study of the self-organization of nanometric
            amorphous precipitates in regular arrays during ion irradiation},
   author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
-  journal = {Nucl. instr. and Meth. B},
+  journal = {Nucl. Instr. and Meth. B},
   volume = {242},
   number = {1--2},
   pages = {679--682},
@@ -291,3 +338,18 @@
   publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
 }
 
+% the one of my boss
+
+@Article{lindner02,
+  title = {High-dose carbon implantations into silicon:
+           fundamental studies for new technological tricks},
+  author = {J. K. N. Lindner},
+  journal = {Appl. Phys. A},
+  volume = {77},
+  pages = {27--38},
+  year = {2003},
+  doi = {10.1007/s00339-002-2062-8},
+  notes = {ibs, burried sic layers}
+}
+
+