chem inertness + mems (fill with refs!)

diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex
index d88e921c1b71108498c251c3fa900f6a08858860..1087110f569e048fef97c13c5908030e3ade0c4a 100644 (file)
--- a/posic/thesis/intro.tex
+++ b/posic/thesis/intro.tex
@@ -2,6 +2,7 @@
 
 Silicon carbide (SiC) has a number of remarkable physical and chemical properties that make it a promising new material in various fields of applications.
 The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}.
+Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS).
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