Die Alternative: Ionenstrahlsynthese
\begin{itemize}
- \item Implantation:
- 180 keV C$^+\rightarrow$ Si, $D=8.5 \times 10^{17}$ cm$^{-2}$,
- $T_{\text{i}}=450 \, ^{\circ} \text{C}$
- \item Temperschritt:
- $T=1250 \, ^{\circ} \text{C}$, $t=??\text{ h}$
+ \item Implantation 1:
+ 180 keV C$^+\rightarrow$ FZ-Si(100), $D=7.9 \times 10^{17}$ cm$^{-2}$,
+ $T_{\text{i}}=500 \, ^{\circ} \text{C}$\\
+ $\rightarrow$
+ \item Implantation 2:
+ 180 keV C$^+\rightarrow$ FZ-Si(100), $D=0.6 \times 10^{17}$ cm$^{-2}$,
+ $T_{\text{i}}=250 \, ^{\circ} \text{C}$\\
+ $\rightarrow$
+ \item Tempern:
+ $T=1250 \, ^{\circ} \text{C}$, $t=10\text{ h}$
\end{itemize}
\end{slide}