\end{slide}
+\begin{slide}
+
+ {\large\bf
+ C 100 interstitial migration along 110 in c-Si (Albe potential)\\
+ }
+
+ {\color{blue}New approach:}\\
+ Place interstitial carbon atom at the respective coordinates
+ into a perfect c-Si matrix!\\
+ {\color{red}Problem:}\\
+ Too high forces due to the small distance of the C atom to the Si
+ atom sharing the lattice site.\\
+ {\color{green}Solution:}
+ Slightly displace the Si atom\\
+
+ \begin{minipage}{6.5cm}
+ Result:
+ (Video \href{../video/c_in_si_pmig_albe.avi}{$\rhd_{\text{local}}$ } $|$
+ \href{http://www.physik.uni-augsburg.de/~zirkelfr/download/posic/c_in_si_pmig_albe.avi}{$\rhd_{\text{remote url}}$})\\
+ \includegraphics[width=6cm]{c_100_110pmig_01_albe.ps}
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \begin{itemize}
+ \item Jump in energy (25 and 75 \%) corresponds to the abrupt
+ structural change (as seen in the video)
+ \item Due to the abrupt changes in structure and energy
+ this is {\color{red}not} the correct migration path and energy!?!
+ \end{itemize}
+ \end{minipage}
+
+\end{slide}
+
\begin{slide}
{\large\bf