From: hackbard Date: Tue, 4 Oct 2011 11:44:18 +0000 (+0200) Subject: - the in cv + update mpi app X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=1742408f68d9aaedfc3e4557a2599b36a7377a2f;p=lectures%2Flatex.git - the in cv + update mpi app --- diff --git a/cv/app_mpi.tex b/cv/app_mpi.tex index 892ac0f..b78427c 100644 --- a/cv/app_mpi.tex +++ b/cv/app_mpi.tex @@ -34,7 +34,7 @@ D-70569 Stuttgart} I am writing to apply for the postdoctoral position in the area of dynamical processes at the nanoscale as advertised in the online presence of the Max Planck Institute for Solid State Research. I am currently doing my doctoral studies at the Institute of Physics at the University of Augsburg. Although the division I am working in concentrates on experimental physics, I have been given the opportunity to work on a rather theoretical field already with the beginning of my diploma thesis. -The writing of my doctoral thesis has just been completed and the studies will hopefully come to an end soon, presumably with the viva voce in mid October. +The writing of my doctoral thesis has just been completed and the studies will hopefully come to an end soon, presumably with the oral examination in mid November. During my research, I investigated defect structures in carbon implanted silicon by means of atomistic simulation studies employing both, first-principles and classical potential methods. Next to interesting results concerning structures of isolated and combined defects as well as transitions between these configurations, conclusions on the not yet fully understood process of silicon carbide precipitation in silicon could be derived. @@ -49,14 +49,15 @@ A quite extensive overview of the whole work is, for instance, given in the late I am highly interested in the offered research project involving methods that go beyond ground-state density functional theory. Modeling a self-organization process realized by the Monte-Carlo technique within the diploma thesis followed by the doctoral research investigations utilizing the more sophisticated empirical potential molecular dynamics approach, which were extended by superior, highly accurate quantum-mechanical calculations, allowed to gain a considerable amount of experiences within the respective methods and the focus on structures and structural evolution on the nanoscale. -Now, I would be happy to enter the field of methods that go beyond ground-state density functional theory with respect to both, application and development, as I would be given the opportunity in your research group. +Now, I would be happy to enter the field of methods that go beyond ground-state density functional theory with respect to both, application and development of respective theories, as I would be given the opportunity in your research group. +Furthermore, advancing the focus of investigations to the electronic structure, correlations and non-equilibrium systems --- exciting physics that I partially noticed at the fringes from other devisions localized in Augsburg --- would constitute an asset with respect to my scientific record. -Doing computational materials science at an experimental physics division starting with the the diploma thesis, has, since then, demanded a high level of autonomy. +Doing computational materials science at an experimental physics division demanded a high level of autonomy. And still, a vivid interaction with experimental scientists was given, my supervisors being amongst them. Please find appended my CV (including the list of publications) for your review. For any further information, please feel free to contact me. -If desired, I would be happy to send you the preliminary version of my thesis. +If desired, I would be happy to send you an electronic version of my thesis. I would be very glad to hear from you. diff --git a/cv/cv.tex b/cv/cv.tex index 8900881..803c301 100644 --- a/cv/cv.tex +++ b/cv/cv.tex @@ -90,7 +90,7 @@ \begin{tabular}{lp{10cm}} Thesis: & {\em - Atomistic simulation study on the + Atomistic simulation study on silicon carbide precipitation in silicon}\\ \end{tabular} }\\