From: hackbard Date: Sat, 17 Oct 2009 00:03:22 +0000 (+0200) Subject: new refs X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=18a141dd3cd447b6153949e031622271e6c4de17;p=lectures%2Flatex.git new refs --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 66641a6..675792a 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -196,7 +196,7 @@ @Article{batra87, title = "Molecular-dynamics study of self-interstitials in silicon", - author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", journal = "Phys. Rev. B", volume = "35", number = "18", @@ -294,7 +294,8 @@ Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes", - author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", journal = "Phys. Rev. B", volume = "55", number = "21", @@ -324,7 +325,8 @@ @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", - author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", journal = "Phys. Rev. B", volume = "64", number = "24", @@ -373,7 +375,7 @@ @Article{capazd94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}", + author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -486,7 +488,8 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", @@ -552,8 +555,8 @@ @Article{zirkelbach2007, title = "Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "257", number = "1--2", @@ -570,8 +573,8 @@ title = "Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "242", number = "1--2", @@ -588,8 +591,8 @@ title = "Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Comp. Mater. Sci.", volume = "33", number = "1--3", @@ -863,3 +866,60 @@ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", author = "Yu. M. Tairov and V. F. Tsvetkov", } + +@Article{powell87, + author = "J. Anthony Powell and Lawrence G. Matus and Maria A. + Kuczmarski", + title = "Growth and Characterization of Cubic Si{C} + Single-Crystal Films on Si", + publisher = "ECS", + year = "1987", + journal = "Journal of The Electrochemical Society", + volume = "134", + number = "6", + pages = "1558--1565", + keywords = "semiconductor materials; silicon compounds; carbon + compounds; crystal morphology; electron mobility", + URL = "http://link.aip.org/link/?JES/134/1558/1", + doi = "10.1149/1.2100708", + notes = "blue light emitting diodes (led)", +} + +@Article{kimoto93, + author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo + and Hiroyuki Matsunami", + title = "Growth mechanism of 6{H}-Si{C} in step-controlled + epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "73", + number = "2", + pages = "726--732", + keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE + RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL + VAPOR DEPOSITION", + URL = "http://link.aip.org/link/?JAP/73/726/1", + doi = "10.1063/1.353329", +} + +@Article{powell90, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of improved quality 3{C}-Si{C} films on + 6{H}-Si{C} substrates", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "14", + pages = "1353--1355", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON + MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR + PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1353/1", + doi = "10.1063/1.102512", +}