From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Sat, 7 Aug 2010 12:14:12 +0000 (+0200)
Subject: si defect refs added
X-Git-Url: https://hackdaworld.org/cgi-bin/gitweb.cgi?a=commitdiff_plain;h=1ce657a7616d6ea2d08abf66696988bae2d568ce;p=lectures%2Flatex.git

si defect refs added
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index aa0d739..7e985e1 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -430,6 +430,24 @@
   publisher =    "American Physical Society",
 }
 
+@Article{bloechl93,
+  title =        "First-principles calculations of self-diffusion
+                 constants in silicon",
+  author =       "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+                 and D. B. Laks and W. Andreoni and S. T. Pantelides",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "70",
+  number =       "16",
+  pages =        "2435--2438",
+  numpages =     "3",
+  year =         "1993",
+  month =        apr,
+  doi =          "10.1103/PhysRevLett.70.2435",
+  publisher =    "American Physical Society",
+  notes =        "si self int diffusion by ab initio md, formation
+                 entropy calculations",
+}
+
 @Article{colombo02,
   title =        "Tight-binding theory of native point defects in
                  silicon",
@@ -461,6 +479,22 @@
                  silicon, si self interstitials, free energy",
 }
 
+@Article{goedecker02,
+  title =        "A Fourfold Coordinated Point Defect in Silicon",
+  author =       "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "88",
+  number =       "23",
+  pages =        "235501",
+  numpages =     "4",
+  year =         "2002",
+  month =        may,
+  doi =          "10.1103/PhysRevLett.88.235501",
+  publisher =    "American Physical Society",
+  notes =        "first time ffcd, fourfold coordinated point defect in
+                 silicon",
+}
+
 @Article{ma10,
   title =        "Ab initio study of self-diffusion in silicon over a
                  wide temperature range: Point defect states and